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Volumn 100, Issue 21, 2012, Pages

Disorder enhancement due to structural relaxation in amorphous Ge 2Sb 2Te 5

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS NETWORKS; AMORPHOUS PHASE; CHALCOGENIDE ALLOY; DRIFT MECHANISM; ELECTRONIC COMPONENT; MEDIUM RANGE ORDER; OPTICAL CHARACTERIZATION; PHASE CHANGE MEMORY CELLS;

EID: 84861832883     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4720182     Document Type: Article
Times cited : (30)

References (27)
  • 1
    • 35748985544 scopus 로고    scopus 로고
    • Phase-change materials for rewriteable data storage
    • 10.1038/nmat2009
    • M. Wuttig and N. Yamada, Phase-change materials for rewriteable data storage., Nature Mater. 6, 824-832 (2007). 10.1038/nmat2009
    • (2007) Nature Mater. , vol.6 , pp. 824-832
    • Wuttig, M.1    Yamada, N.2
  • 14
    • 0005382867 scopus 로고
    • 10.1103/PhysRevB.8.660
    • G. Lucovsky and R. M. White, Phys. Rev. B 8, 660-667 (1973). 10.1103/PhysRevB.8.660
    • (1973) Phys. Rev. B , vol.8 , pp. 660-667
    • Lucovsky, G.1    White, R.M.2
  • 15
    • 0000020923 scopus 로고
    • 10.1088/0022-3719/13/26/009
    • P. B. Littlewood, J. Phys. C 13, 4855-4873 (1980). 10.1088/0022-3719/13/ 26/009
    • (1980) J. Phys. C , vol.13 , pp. 4855-4873
    • Littlewood, P.B.1
  • 16
  • 17
    • 26344462977 scopus 로고
    • 10.1103/PhysRev.54.647
    • J. Frenkel, Phys. Rev. 54, 647 (1938). 10.1103/PhysRev.54.647
    • (1938) Phys. Rev. , vol.54 , pp. 647
    • Frenkel, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.