Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature

Applied Physics Letters

Volumn 96, Issue 13, 2010, Pages

  Wu, Zhe ^a,b   Lee, Suyoun ^a   Park, Young Wook ^a,c   Ahn, Hyung Woo ^a   Jeong, Doo Seok ^a   Jeong, Jeung Hyun ^a   No, Kwangsoo ^b   Cheong, Byung Ki ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT TEMPERATURES; CARRIER DENSITY; COVALENT BONDING; CRYSTALLINE GE; DEVICE CHARACTERISTICS; RESET CURRENTS;

CARRIER MOBILITY; CRYSTALLINE MATERIALS; GERMANIUM; LINEAR TRANSFORMATIONS; METALLIC COMPOUNDS; PHASE STABILITY; SETTLING TANKS; SYSTEM THEORY; TEMPERATURE;

PHASE CHANGE MEMORY;

EID: 77950505005     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3374334     Document Type: Article

References (18)

1. S. R. Ovshinsky, Phys. Rev. Lett. PRLTAO 0031-9007 21, 1450 (1968). 10.1103/PhysRevLett.21.1450
2. N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, and M. Takao, J. Appl. Phys. JAPIAU 0021-8979 69, 2849 (1991). 10.1063/1.348620
3. S. Lai, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2003, 255.
4. S. Hudgens and B. Johnson, MRS Bull. MRSBEA 0883-7694 29, 829 (2004).
5. S. Raoux, G. W. Burr, M. J. Breitwisch, C. T. Rettner, Y. -C. Chen, R. M. Shelby, M. Salinga, D. Krebs, S. -H. Chen, H. -L. Lung, and C. H. Lam, IBM J. Res. Dev. IBMJAE 0018-8646 52, 465 (2008).
6. J. H. Oh, J. H. Park, Y. S. Lim, H. S. Lim, Y. T. Oh, J. S. Kim, J. M. Shin, Y. J. Song, K. C. Ryoo, D. W. Lim, S. S. Park, J. I. Kim, J. H. Kim, J. Y. Yu, C. W. Jeong, J. H. Kong, D. H. Kang, G. H. Koh, G. T. Jeong, H. S. Jeong, and K. N. Kim, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2006, 49.
7. S. Lee, J. -h. Jeong, Z. Wu, Y. -W. Park, W. M. Kim, and B. Cheong, J. Electrochem. Soc. JESOAN 0013-4651 156, H612 (2009). 10.1149/1.3133252
8. B. Rajendran, M. Breitwisch, M. H. Lee, G. W. Burr, Y. H. Shih, R. Cheek, A. Schrott, C. F. Chen, E. Joseph, R. Dasaka, H. L. Lung, and C. Lam, IEEE Electron Device Lett. EDLEDZ 0741-3106 30, 126 (2009). 10.1109/LED.2008.2010004
9. S. Lee, D. S. Jeong, J. -h. Jeong, Z. Wu, Y. -W. Park, H. -W. Ahn, W. M. Kim, and B. Cheong, Appl. Phys. Lett. APPLAB 0003-6951 95, 093504 (2009). 10.1063/1.3211872
10. J. -W. Park, H. Lee, T. D. Kang, A. Sirenko, H. S. Lee, S. Lee, J-. h. Jeong, B. Cheong, (unpublished).
11. A. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, and R. Bez, IEEE Trans. Electron Devices IETDAI 0018-9383 51, 452 (2004). 10.1109/TED.2003.823243
12. J. -h. Jeong, H. S. Lee, S. Lee, T. S. Lee, W. M. Kim, Z. Wu S. C. Kim, K. H. Oh, and B. Cheong, J. Phys. D JPAPBE 0022-3727 42, 035104 (2009). 10.1088/0022-3727/42/3/035104
13. S. M. Sadeghipour, L. Pileggi, and M. Asheghi, The Tenth Intersociety Conference on ITHERM, 2006 (unpublished), p. 660.
14. W. Lengauer, S. Binder, K. Aigner, P. Ettmayer, A. Guillou, J. Debuigne, and G. Groboth, J. Alloys Compd. JALCEU 0925-8388 217, 137 (1995). 10.1016/0925-8388(94)01315-9
15. E. R. Meinders, H. J. Borg, M. H. R. Lankhorst, J. Hellmig, and A. V. Mijiritskii, J. Appl. Phys. JAPIAU 0021-8979 91, 9794 (2002) 10.1063/1.1479461; H. K. Lyeo, D. G. Cahill, B. S. Lee, J. R. Abelson, M. H. Kwon, K. B. Kim, S. G. Bishop, and B. Cheong, Appl. Phys. Lett. APPLAB 0003-6951 89, 151904 (2006). 10.1063/1.2359354
16. D. Krebs, S. Raoux, C. T. Rettner, G. W. Burr, M. Salinga, and M. Wuttig, Appl. Phys. Lett. APPLAB 0003-6951 95, 082101 (2009). 10.1063/1.3210792
17. W. van Roosbroeck, Phys. Rev. Lett. PRLTAO 0031-9007 28, 1120 (1972). 10.1103/PhysRevLett.28.1120
18. D. Adler, H. K. Henisch, and N. Mott, Rev. Mod. Phys. RMPHAT 0034-6861 50, 209 (1978). 10.1103/RevModPhys.50.209