Role of mechanical stress in the resistance drift of Ge2Sb 2Te5 films and phase change memories

Applied Physics Letters

Volumn 99, Issue 22, 2011, Pages

  Rizzi, M ^a   Spessot, A ^b   Fantini, P ^b   Ielmini, D ^a  

^a POLITECNICO DI MILANO   (Italy)

^b Micron   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE VOLUMES; AMORPHOUS CHALCOGENIDE; AMORPHOUS PHASE; DEVICE RESISTANCE; MECHANICAL STRESS; NANOMETER SIZE; ROOT CAUSE; STRESS LEVELS;

GERMANIUM; STRESSES;

PHASE CHANGE MEMORY;

EID: 82955164071     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3664631     Document Type: Article

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