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Applied Physics Letters

Volumn 100, Issue 21, 2012, Pages

Extremely high-density GaAs quantum dots grown by droplet epitaxy

(4) Jo, M a Mano, T a Sakuma, Y a Sakoda, K a,b

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

b UNIVERSITY OF TSUKUBA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AREAL DENSITIES; DOT DENSITY; DROPLET EPITAXY; GAAS; HIGH-DENSITY; LOW TEMPERATURES;

DROPS; EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS;

GALLIUM ARSENIDE;

EID: 84861809888 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4721663 Document Type: Article

Times cited : (36)

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