Structural atomic-scale analysis of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311)A substrate

Applied Physics Letters

Volumn 98, Issue 19, 2011, Pages

  Keizer, J G ^a   Jo, M ^b   Mano, T ^b   Noda, T ^b   Sakoda, K ^b   Koenraad, P M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE; ATOMIC-SCALE ANALYSIS; DROPLET EPITAXY; GAAS/ALGAAS; INTERFACE FLUCTUATION; INTERFACE INSTABILITY; SURROUNDING MATRIX; WETTING LAYER;

DROPS; EPITAXIAL GROWTH; GALLIUM; NANOWIRES; SEMICONDUCTOR QUANTUM WIRES; STRUCTURAL ANALYSIS; WIRE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79959674519     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3589965     Document Type: Article

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