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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2118-2121

Enhanced optical properties of high-density (>1011/cm 2) InAs/AlAs quantum dots by hydrogen passivation

(6) Park, Se Ki a Tatebayashi, Jun a Nakaoka, Toshihiro a Sato, Tomohiko a Park, Young Ju b Arakawa, Yasuhiko a

a UNIVERSITY OF TOKYO (Japan)

b Korea Institute of Science and Technology (South Korea)

Author keywords

GaAs insertion layer; Hydrogen passivation; InAs AlAs quantum dots; Time resolved photoluminescence measurements

Indexed keywords

ALUMINUM; ATOMIC FORCE MICROSCOPY; CHEMICAL BONDS; DESORPTION; EPITAXIAL GROWTH; HYDROGEN; HYDROGENATION; INTEGRATED CIRCUITS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PASSIVATION; PHOTOLUMINESCENCE; PLASMA THEORY;

HYDROGEN PASSIVATION; INSERTION LAYERS (IL); NONRADIATIVE RECOMBINATION CENTERS; TIME-RESOLVED PHOTOLUMINESCENCE MEASUREMENTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 3142528795 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.2118 Document Type: Conference Paper

Times cited : (4)

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- S. K. Park, J. Tatebayashi and Y. Arakawa: to be published in Physica E.
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- Park, S.K.¹ Tatebayashi, J.² Arakawa, Y.³

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