Droplet epitaxy of GaAs quantum dots on (0 0 1), vicinal (0 0 1), (1 1 0), and (3 1 1)A GaAs

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1825-1827

  Heyn, Ch ^a   Stemmann, A ^a   Schramm, A ^a   Hansen, W ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

A1. Atomic force microscopy; A1. Diffusion; A1. Low dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DIFFUSION IN SOLIDS; DROP FORMATION; EPITAXIAL GROWTH; GALLIUM ALLOYS; METALLIC GLASS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SURFACE DIFFUSION; SURFACES;

A1. ATOMIC FORCE MICROSCOPY; A1. DIFFUSION; A1. LOW-DIMENSIONAL STRUCTURES; A3. MOLECULAR BEAM EPITAXY; B2. SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 63349093326     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.055     Document Type: Article

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