Lasing in ultra-narrow emission from GaAs quantum dots coupled with a two-dimensional layer

Nanotechnology

Volumn 22, Issue 33, 2011, Pages

  Jo, M ^a   Mano, T ^a   Sakoda, K ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DROPLET EPITAXY; ELECTRICALLY INJECTED; GAAS; GAAS(001); GROUND STATE LASING; GROWTH TECHNIQUES; HIGH QUALITY; HIGH-TEMPERATURE ANNEALING; LOW TEMPERATURES; PULSED OPERATION;

ALUMINUM GALLIUM ARSENIDE; GALLIUM ALLOYS; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; TWO DIMENSIONAL;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79961033434     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/33/335201     Document Type: Article

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