Effect of hydrogen peroxide treatment on the electrical characteristics of Au/ZnO epitaxial Schottky diode

Materials Science in Semiconductor Processing

Volumn 14, Issue 1, 2011, Pages 1-4

  Singh, C S ^a   Agarwal, G ^a   Durga Rao, G ^a   Chaudhary, Sujeet ^a   Singh, R ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

Hydrogen peroxide; IV characteristics; Schottky diode; XPS; ZnO

Indexed keywords

BARRIER HEIGHTS; CURRENT VOLTAGE; EFFECT OF HYDROGEN; ELECTRICAL BEHAVIORS; ELECTRICAL CHARACTERISTIC; IDEALITY FACTORS; IV CHARACTERISTICS; PRE-TREATMENT; RECTIFYING BEHAVIORS; REVERSE BIAS VOLTAGE; ROOM TEMPERATURE; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SURFACE CONDUCTIVE LAYER; XPS; ZNO;

BIAS VOLTAGE; DIODES; DISTILLATION; EPITAXIAL FILMS; EPITAXIAL GROWTH; GOLD; HYDROGEN; HYDROGEN PEROXIDE; OXIDATION; SCHOTTKY BARRIER DIODES; X RAY PHOTOELECTRON SPECTROSCOPY;

ZINC OXIDE;

EID: 79952616425     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2010.12.009     Document Type: Article

References (15)

1. T. Aoki, H. Yoshinori, and D.C. Look Appl Phys Lett 76 2000 3257
2. H. Ohta, M. Kamiya, T. Kamiya, M. Hirano, and N. Hosono Thin Solid Films 445 2003 317
3. H. Ohta, K. Kawamura, M. Orita, M. Hirano, N. Sarukura, and H. Hosono Appl Phys Lett 77 2000 475
4. S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lu, and H.J. Shen J Cryst Growth 225 2001 110
5. Ya I Alivov, J.E. Van Nostrand, D.C. Look, M.V. Chukichev, and B.M. Ataev Appl Phys Lett 83 2003 2943
6. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, and M. Sumiya Nat Mater 4 2005 42
7. D.C. Look, J.W. Hemsky, and J.R. Sizelove Phys Rev Lett 82 1999 2552
8. A. Osinsky, J.W. Dong, M.Z. Kauser, B. Hertog, A.M. Dabiran, and P.P. Chow Appl Phys Lett 85 2004 4272
9. J. Mathew, T. Hitoshi, and K. Tomoji Jpn J Appl Phys 38 1999 L1205
10. C.A. Mead Phys Lett 18 1965 218
11. A.Y. Polyakov, N. Smirnov, E. Kozhukhova, V. Vdovin, K. Ip, and D.P. Norton J Vac Sci Technol A 21 2003 1603
12. E.M. Kaidashev, M. Lorenz, H. von Wenckstem, A. Rahm, H.-C. Semmelhack, and K.H. Han Appl Phys Lett 82 2003 3901
13. H. von Wenckstem, E.M. Kaidashev, M. Lorenz, H. Hochmuch, G. Biehne, and J. Lenzner Appl Phys Lett 84 2004 79
14. S.M. Sze Physics of Semiconductor Devices 1981 Wiley New York pp. 849
15. Y. Chen, F. Jiang, Li Wang, C. Mo, Y. Pu, and W. Fang J Cryst Growth 268 2004 71