Annealing effects in light-emitting Si nanostructures formed in SiO2 by ion implantation and transient preheating

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 583-586

  Kachurin, G A ^a   Zhuravlev, K S ^a   Pazdnikov, N A ^a   Leier, A F ^a   Tyschenko, I E ^a   Volodin, V A ^a   Skorupa, W ^b   Yankov, R A ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; INCLUSIONS; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; OPTICAL MATERIALS; PHOTOLUMINESCENCE; PREHEATING; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICA; THERMAL EFFECTS;

LIGHT EMITTING SILICON NANOSTRUCTURES;

SILICON;

EID: 0031547802     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)01134-2     Document Type: Article

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