SCOPUS 정보 검색 플랫폼

Volumn 108, Issue 11, 2010, Pages

Investigation of emitting centers in SiO2 codoped with silicon nanoclusters and Er3+ ions by cathodoluminescence technique

(7) Cueff, Śbastien a Labb́, Christophe a Dierre, Benjamin b Fabbri, Filippo b Sekiguchi, Takashi b Portier, Xavier a Rizk, Richard a

a UNIVERSITÉ DE CAEN (France)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CO-DOPED; ER-DOPED; ER3+ IONS; ERBIUM-DOPED SILICON; EXCESS SI; MAGNETRON CO-SPUTTERING; OXYGEN DEFICIENT CENTERS; SI NANOCLUSTER; SI-BASED; SILICON NANOCLUSTERS; VISIBLE RANGE;

ANNEALING; CATHODOLUMINESCENCE; DOPING (ADDITIVES); ENERGY TRANSFER; ERBIUM; IONS; MAGNETRONS; NANOCLUSTERS; OXIDE FILMS; OXYGEN; PHASE SEPARATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

SILICON OXIDES;

EID: 78751565499 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3517091 Document Type: Article

Times cited : (24)

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