Growth of colorless transparent GaN single crystals on prismatic GaN seeds using a Ga melt and Na vapor

Materials Research Bulletin

Volumn 44, Issue 3, 2009, Pages 594-599

  Yamada, Takahiro ^a   Yamane, Hisanori ^a   Yao, Yongzhao ^b   Yokoyama, Masaaki ^b,c   Sekiguchi, Takashi ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c HORIBA LTD   (Japan)

Author keywords

A. Nitrides; A. Semiconductors; B. Crystal growth; B. Luminescence

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; CRYSTALS; ELECTRIC CONDUCTIVITY; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; GRAIN BOUNDARIES; GROWTH (MATERIALS); LIGHT EMISSION; LUMINESCENCE; NITRIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS; SODIUM; VAPORS;

A. NITRIDES; A. SEMICONDUCTORS; B. CRYSTAL GROWTH; B. LUMINESCENCE; CATHODOLUMINESCENCE SPECTRUM; COLORLESS CRYSTALS; EMISSION PEAKS; FLUX METHODS; FULL-WIDTH AT HALF MAXIMUMS; GAN CRYSTALS; GROWN CRYSTALS; GROWTH OF GAN; NEAR BAND EDGES; PREMIXED; ROOM TEMPERATURES; SEED CRYSTALS; X-RAY ROCKING CURVES;

SINGLE CRYSTALS;

EID: 58849096627     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2008.07.007     Document Type: Article

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