Ammonothermal growth of bulk GaN

Journal of Crystal Growth

Volumn 310, Issue 17, 2008, Pages 3907-3910

  Hashimoto, Tadao ^a,b   Wu, Feng ^a,b   Speck, James S ^a,b   Nakamura, Shuji ^a,b  

^a University of California   (United States)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A2. Growth from solutions; A2. Single crystal growth; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

CRYSTALLOGRAPHY; CRYSTALS; GALLIUM ALLOYS; GALLIUM NITRIDE; POWDERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; THREE DIMENSIONAL;

A2. GROWTH FROM SOLUTIONS; A2. SINGLE CRYSTAL GROWTH; AMMONOTHERMAL GROWTH; AMMONOTHERMAL METHOD; B1. NITRIDES; B2. SEMICONDUCTING GALLIUM COMPOUNDS; BULK GAN; CRYSTALLOGRAPHIC FACETS; HIGH-QUALITY; MULTIPLE GRAINS; SEED CRYSTALS; SELECTIVE ETCHING; SLICED WAFERS; STRUCTURAL QUALITIES; TRANSMISSION ELECTRON; X-RAY DIFFRACTION;

CRYSTAL MICROSTRUCTURE;

EID: 49449084809     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.005     Document Type: Article

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