GaN crystallization by the high-pressure solution growth method on HVPE bulk seed

Journal of Crystal Growth

Volumn 310, Issue 17, 2008, Pages 3924-3933

  Bockowski, M ^a   Strak, P ^b   Grzegory, I ^a   Lucznik, B ^a   Porowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

A2. High pressure growth from solution; A2. Seeded growth; B1. Gallium nitride

Indexed keywords

CRYSTALLIZATION; CRYSTALLOGRAPHY; ECOLOGY; FINITE ELEMENT METHOD; FLUID DYNAMICS; FLUID MECHANICS; GALLIUM ALLOYS; GALLIUM NITRIDE; MATERIALS PROPERTIES; METALLIC GLASS; NANOCRYSTALLINE ALLOYS; SEMICONDUCTING GALLIUM;

A2. HIGH-PRESSURE GROWTH FROM SOLUTION; A2. SEEDED GROWTH; B1. GALLIUM NITRIDE; BULK GAN; CONVECTIVE TRANSPORT; FINITE-ELEMENT CALCULATIONS; GAN CRYSTALS; GROWTH METHOD; LIQUID GALLIUM; PHYSICAL PROPERTIES; PRESSURE SOLUTION; SEEDED GROWTH; VELOCITY VECTORS;

NAVIER STOKES EQUATIONS;

EID: 49649085734     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.030     Document Type: Article

References (16)

1. R. Dwiliński, R. Doradziński, J. Garczyński, L.P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi and H. Hayashi, Exellent crystallinity of truly bulk ammonothermal GaN, Journal of Crystal Growth (2008) doi:10.1016/j.jcrysgro.2008.06.036.
2. T. Hashimoto, F. Wu, J. S. Speck, S. Nakamura, Ammonothermal growth of bulk GaN, Journal of Crystal Growth (2008), doi:10.1016/j.jcrysgro.2008.06.005.
3. D. Ehrentraut, Y. Kagamitani, T. Fukuda, F. Orito, S. Kawabata, K. Katano, S. Terada, Reviewing recent developments in the acid ammonothermal crystal growth of gallium nitride, Journal of Crystal Growth (2008) doi:10.1016/j.jcrysgro.2008.06.017.
4. Sun G., Meissner E., Berwian P., Müller G., and Friedrich J. J. Crystal Growth 305 (2007) 326
5. Morishita M., Kawamura F., Kawahara M., Yoshimura M., Mori Y., and Sasaki T. J. Crystal Growth 284 (2005) 91
6. Grzegory I., Boćkowski M., and Porowski S. In: Capper P. (Ed). Bulk Crystal Growth of Electronic, Optical and Optoelectronic Materials (2005), Wiley, New York 173
7. Bockowski M., Grzegory I., Krukowski S., Lucznik B., Romanowski Z., Wroblewski M., Borysiuk J., Weyher J., Hageman P., and Porowski S. J. of Crystal Growth 246 (2002) 194
8. Fidap User Manual, Fluent Inc., 2001.
9. Krukowski S., Grzegory I., Bockowski M., Lucznik B., Suski T., Nowak G., Borysiuk J., Wróblewski M., Leszczynski M., Perlin P., Porowski S., and Weyher J.L. Int. J. Mater. Prod. Technol. 22 (2005) 226
10. Material Property Data 〈http://www.matweb.com〉.
11. International Nuclear Safety Center 〈http://www.insc.anl.gov/matprop/graphite/〉.
12. Nipko J.C., Loong C.-K., Balkas C.M., and Davis R.F. Appl. Phys. Lett. 73 (1998) 34
13. Jezowski A., Stachowiak P., Plackowski T., Suski T., Krukowski S., Bockowski M., Grzegory I., Danilchenko B., and Paszkiewicz T. Phys. Stat. Sol. B 240 2 (2003) 447
14. Boćkowski M., Grzegory I., Krukowski S., Lucznik B., Wróblewski M., Kamler G., Borysiuk J., Kwiatkowski P., Jasik K., and Porowski S. J. Crystal Growth 274 (2005) 55
15. Hussy S., Meissner E., Berwian P., Friedrich J., and Muller G. J. Crystal Growth 310 (2008) 738
16. Bockowski M., Stak P., Kempisty P., Grzegory I., Krukowski S., Lucznik B., and Porowski S. J. Crystal Growth 307 (2007) 259