Dopant depletion in the near surface region of thermally prepared silicon (100) in UHV

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 2, 2012, Pages

  Pitters, Jason L ^a   Piva, Paul G ^b   Wolkow, Robert A ^a,b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b UNIVERSITY OF ALBERTA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CARRIER CONCENTRATION; DANGLING BONDS; ELECTRIC CHARGE; HYDROGEN; SCANNING TUNNELING MICROSCOPY;

CHARGING CHARACTERISTICS; DOPANT ATOMS; DOPANT CONCENTRATIONS; DOPANT STATE; DOPED SAMPLE; HYDROGEN-TERMINATED SILICON; HYDROGEN-TERMINATED SURFACES; IMAGING CHARACTERISTICS; NEAR SURFACE REGIONS; NEAR-SURFACE; SILICON (100); ULTRAHIGH VACUUM SCANNING TUNNELING MICROSCOPIES;

SEMICONDUCTOR DOPING;

EID: 84861613496     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3694010     Document Type: Article

References (39)

1. J. J. Boland, Adv. Phys. 42, 129 (1993). 10.1080/00018739300101474
2. J. A. Kubby and J. J. Boland, Surf. Sci. Rep. 26, 61 (1996). 10.1016/S0167-5729(97)80001-5
3. K. Oura, V. G. Lifshits, A. A. Saranin, A. V. Zotov, and M. Katayama, Surf. Sci. Rep. 35, 1 (1999). 10.1016/S0167-5729(99)00005-9
4. B. S. Swartzentruber, Y.-W. Mo, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Technol. A 7, 2901 (1989). 10.1116/1.576167
5. J. L. Pitters, P. G. Piva, X. Tong, and R. A. Wolkow, Nano Lett. 3, 1431 (2003). 10.1021/nl034258+
6. I. A. Dogel, S. A. Dogel, J. L. Pitters, G. A. DiLabio, and R. A. Wolkow, Chem. Phys. Lett. 448, 237 (2007). 10.1016/j.cplett.2007.10.001
7. R. A. Wolkow, Ann. Rev. Phys. Chem. 50, 413 (1999). 10.1146/annurev. physchem.50.1.413
8. D. D. M. Wayner and R. A. Wolkow, J. Chem. Soc. Perkin Trans. 2 1, 23 (2002). 10.1039/B100704L
9. M. Sakurai, C. Thirstrup, and M. Aono, Phys. Rev. B 62, 16167 (2000). 10.1103/PhysRevB.62.16167
10. M. McEllistrem, M. Allgeier, and J. J. Boland, Science 279, 545 (1998). 10.1126/science.279.5350.545
11. T. C. Shen, C. Wang, G. C. Abein, J. R. Tucker, J. W. Lyding, Ph. Avouris, and R. E. Walkup, Science 268, 1590 (1995). 10.1126/science.268.5217. 1590
12. L Soukiassian, A. Mayne, M. Carbone, and G. Dujardin. Phys. Rev. B 68, 035303 (2003). 10.1103/PhysRevB.68.035303
13. M. C. Hersam, N. P. Guisinger, and J. W. Lyding, Nanotech. 11, 70 (2000). 10.1088/0957-4484/11/2/306
14. T. Yoshida and H. Hawegawa, Jpn. J. Appl. Phys. 39, 4504 (2000). 10.1143/JJAP.39.4504
15. L. Liu, J. Yu, and J. W. Lyding, MRS Symp. Proc. 705, Y6.6.1 (2002).
16. K. Bobrov, G. Comtet, G. Dujardin, and L. Hellner, Phys. Rev. Lett. 86, 2633 (2001). 10.1103/PhysRevLett.86.2633
17. A. Bellec, D. Riedel, G. Dujardin, O. Boudrioua, L. Chaput, L. Stauffer, and P. Sonnet, Phys. Rev. B. 80, 245434 (2009). 10.1103/PhysRevB.80.245434
18. H. Raza, Phys. Rev. B 76, 045308 (2007). 10.1103/PhysRevB.76.045308
19. M. B. Haider, J. L. Pitters, G. A. DiLabio, L. Livadaru, J. Y. Mutus, and R. A. Wolkow, Phys. Rev. Lett. 102, 046805 (2009). 10.1103/PhysRevLett.102. 046805
20. J. L. Pitters, L. Livadaru, M. B. Haider, and R. A. Wolkow, J. Chem. Phys. 134, 064712 (2011). 10.1063/1.3514896
21. L. Livadaru, P. Xue, Z. Shaterzadeh-Yazdi, G. A. DiLabio, J. Mutus, J. L. Pitters, B. C. Sanders, and R. A. Wolkow, New J. Phys. 12, 083018 (2010). 10.1088/1367-2630/12/8/083018
22. L. Livadaru, J. L. Pitters, M. Taucer, and R. A. Wolkow, Phys. Rev. B 84, 205416 (2011). 10.1103/PhysRevB.84.205416
23. R. M. Feenstra, Y. Dong, M. P. Semtsiv, and W. T. Masselink, Nanotech. 18, 044015 (2007). 10.1088/0957-4484/18/4/044015
24. M. B. Johnson and J. M. Halbout, J. Vac. Sci. Technol. B. 10, 508 (1992). 10.1116/1.586384
25. H. Fukutome, K. Takano, H. Yasuda, K. Maehashi, S. Hasegawa, and H. Nakashima, App. Surf. Sci. 130-132, 346 (1998). 10.1016/S0169-4332(98)00082-8
26. R. M. Feenstra and J. A. Stroscio, J. Vac. Sci. Technol. B 5, 923 (1987). 10.1116/1.583691
27. R. M. Feenstra, Phys. Rev. B 50, 4561 (1994). 10.1103/PhysRevB.50.4561
28. E. T. Yu, Chem. Rev. 97, 1017 (1997). 10.1021/cr960084n
29. A. Frster, J. M. Layet, and H. Luth, Appl. Phys. A 47, 95 (1988). 10.1007/BF00619705
30. A. Frster, J. M. Layet, and H. Luth, Appl. Surf. Sci. 41/42, 306 (1989). 10.1016/0169-4332(89)90076-7
31. P. J. Chen, J. E. Rowe, and J. T. Yates, Phys. Rev. B 50, 18134 (1994). 10.1103/PhysRevB.50.18134
32. S. Slomi, M. Ferri, M. Bersani, D. Guibertoni, and V. Soncini, J. Appl. Phys. 94, 4950 (2003). 10.1063/1.1609640
33. Y. Suwa, S. Matsuura, M. Fujimori, S. Heike, T. Onogi, H. Kajiyama, T. Hitosugi, K. Kitazawa, T. Uda, and T. Hashizume, Phys. Rev. Lett. 90, 156101 (2003). 10.1103/PhysRevLett.90.156101
34. S. M. Sze and K. K. Ng, Physics of Semiconductor Physics (Wiley, New York, 2007).
35. S. Sinha, A. J. Dickie, and R. A. Wolkow, Chem. Phys. Lett. 469, 279 (2009). 10.1016/j.cplett.2008.12.071
36. P. G. Piva, G. A. DiLabio, J. L. Pitters, J. Zikovsky, M. Rezeq, S. Dogel, W. A. Hofer, and R. A. Wolkow, Nature 435, 658 (2005). 10.1038/nature03563
37. H. S. Kato, M. Kawai, K. Akagi, and S. Tsuneyuki, Surf. Sci. 587, 34 (2005). 10.1016/j.susc.2005.04.032
38. H. Ibach and D. L. Mills, Electron Energy Loss Spectroscopy and Surface Vibrations (Academic Press, New York, 1982), pp. 63-89.
39. H. Lth, Surf. Sci. 168, 773 (1986). 10.1016/0039-6028(86)90909-X