Electronic structure of partially hydrogenated Si(100)-(2 × 1) surfaces prepared by thermal and nonthermal desorption

Physical Review Letters

Volumn 86, Issue 12, 2001, Pages 2633-2636

  Bobrov, K ^a   Comtet, G ^a   Dujardin, G ^a   Hellner, L ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; CHEMICAL BONDS; ELECTRON EMISSION; ELECTRONIC STRUCTURE; HYDROGENATION; PHOTOELECTRON SPECTROSCOPY; PHOTONS; RAPID THERMAL ANNEALING; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE; TEMPERATURE PROGRAMMED DESORPTION;

CONTROLLED THERMAL ANNEALING; DANGLING BOND; NONTHERMAL PHOTON STIMULATED DESORPTION; PARTIALLY HYDROGENATED SILICON; VALENCE BAND PHOTOEMISSION;

SEMICONDUCTING SILICON;

EID: 0035911628     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.2633     Document Type: Article

References (22)