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Journal of Chemical Physics

Volumn 134, Issue 6, 2011, Pages

Tunnel coupled dangling bond structures on hydrogen terminated silicon surfaces

(4) Pitters, Jason L a Livadaru, Lucian a,b Haider, M Baseer a,c Wolkow, Robert A a,b

a NATIONAL RESEARCH COUNCIL CANADA (Canada)

b UNIVERSITY OF ALBERTA (Canada)

c KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

BOND STRUCTURES; CHEMICAL METHOD; COULOMB REPULSIONS; DOPED SILICON; ELECTRONIC BEHAVIORS; EXTENDED HUBBARD MODEL; FILLING BEHAVIOR; GOOD CORRELATIONS; HYDROGEN-TERMINATED SILICON SURFACES; NET CHARGES; QUANTUM DOT; SI(1 0 0); THEORETICAL RESULT; TUNNEL COUPLING;

HYDROGEN; HYDROGEN BONDS;

DANGLING BONDS;

HYDROGEN; QUANTUM DOT; SILICON;

ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; SURFACE PROPERTY;

HYDROGEN; MOLECULAR STRUCTURE; QUANTUM DOTS; SILICON; SURFACE PROPERTIES;

EID: 79951778204 PISSN: 00219606 EISSN: None Source Type: Journal
DOI: 10.1063/1.3514896 Document Type: Article

Times cited : (45)

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