Corrigendum: Dangling-bond charge qubit on a silicon surface (New Journal of Physics (2010) 12 (083018) DOI: 10.1088/1367-2630/12/8/083018);Dangling-bond charge qubit on a silicon surface

New Journal of Physics

Volumn 12, Issue , 2010, Pages

  Livadaru, Lucian ^a,b   Xue, Peng ^c,d   Shaterzadeh Yazdi, Zahra ^c   Dilabio, Gino A ^a   Mutus, Josh ^b   Pitters, Jason L ^a   Sanders, Barry C ^c   Wolkow, Robert A ^a,b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b UNIVERSITY OF ALBERTA   (Canada)

^c UNIVERSITY OF CALGARY   (Canada)

^d SOUTHEAST UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

QUANTUM COMPUTERS; QUANTUM OPTICS; SILICON;

COHERENT DYNAMICS; DECOHERENCE RATES; EXCESS ELECTRONS; FIRST-ORDER ANALYSIS; QUANTUM COMPUTING; SILICON SURFACES; SILICON-BASED; TUNNELING RATES;

DANGLING BONDS;

EID: 77956591446     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/aa8b88     Document Type: Erratum

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