Dangling bond dynamics on the silicon (100)-2 x 1 surface: Dissociation, diffusion, and recombination

Science

Volumn 279, Issue 5350, 1998, Pages 545-548

  McEllistrem, Marcus ^a   Allgeier, Matthew ^a   Boland, John J ^a  

^a University of North Carolina at Chapel Hill   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ARTICLE; DESORPTION; DIFFUSION; DISSOCIATION; LOW TEMPERATURE PROCEDURES; MICROSCOPY; PRIORITY JOURNAL; TEMPERATURE SENSITIVITY;

EID: 0032559191     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.279.5350.545     Document Type: Article

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21. We thank E. J. Buehler and M. Fouchier for programming assistance, and M. Rubinstein and J. L. Whitten for insightful discussions. Financial support by NSF under contracts DMR 9509790 and DMR 9413999 is gratefully acknowledged.