Dopant-pair structures segregated on a hydrogen-terminated Si(100) surface

Physical Review Letters

Volumn 90, Issue 15, 2003, Pages

  Suwa, Yuji ^a   Matsuura, S ^b   Fujimori, M ^a   Heike, S ^a   Onogi, T ^a   Kajiyama, H ^a   Hitosugi, T ^b   Kitazawa, K ^b   Uda, T ^a   Hashizume, T ^a  

^a HITACHI LTD   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY (SPECIFIC GRAVITY); DIMERS; MOLECULAR STRUCTURE; NUMERICAL METHODS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DOPING; SUBSTRATES; SURFACE TREATMENT;

ATOMIC STRUCTURES; DOPANT PAIR STRUCTURES; QUANTUM EFFECT; SURFACE DENSITY;

SEMICONDUCTING SILICON;

EID: 0037526499     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (25)

1. A. Asenov, IEEE Trans. Electron Devices 45, 2505 (1998).
2. B. Siemens et al., Phys. Rev. B 59, 2995 (1999), and references therein.
3. J. Gebauer et al., Phys. Rev. Lett. 78, 3334 (1997).
4. C. Domke, Ph. Ebert, and K. Urban, Phys. Rev. B 57, 4482 (1998).
5. H. Fukutome et al., Appl. Surf. Sci. 130, 346 (1998).
6. H.-A. Lin, R. Jaccodne, and M. S. Freund, Appl. Phys. Lett. 72, 1993 (1998).
7. R. S. Becker, T. Klitsner, and J. S. Vickers, J. Microsc. 152, 157 (1988).
8. Y. Wang, R. J. Hamers, and E. Kaxiras, Phys. Rev. Lett. 74, 403 (1995).
9. M. A. Kulakov et al., Appl. Surf. Sci. 103, 443 (1996).
10. K. Miki et al., Surf. Sci. 421, 397 (1999).
11. T. Sakurai et al., Prog. Surf. Sci. 33, 3 (1990).
12. T. Hashizume et al., Jpn. J. Appl. Phys. 35, L1085 (1996).
13. T. Hitosugi et al., Jpn. J. Appl. Phys. 36, L361 (1997).
14. Y. Suwa et al., Trans. Mater. Res. Soc. Jpn. 24, 217 (1999).
15. D. Vanderbilt, Phys. Rev. B 41, 7892 (1990).
16. K. Laasonen et al., Phys. Rev. B 47, 10 142 (1993).
17. 2 molecule in a vacuum and on a H-terminated Si surface.
18. Y. Suwa et al., Mater. Sci. Eng., B 79, 98 (2001).
19. J. Tersoff and D. R. Hamann, Phys. Rev. Lett. 50, 1998 (1983).
20. Lequn Liu, Jixin Yu, and J. W. Lyding, Appl. Phys. Lett. 78, 386 (2001).
21. M. Ramamoorthy, E. L. Briggs, and J. Bernholc, Phys. Rev. Lett. 81, 1642 (1998).
22. R. M. Tromp, R. J. Hamers, and J. E. Demuth, Phys. Rev. Lett. 55, 1303 (1985).
23. J. Nara, T. Sasaki, and T. Ohno, Phys. Rev. Lett. 79, 4421 (1997).
24. K. Miki et al., Inst. Phys. Conf. Ser. 164, 167 (1999).
25. S.-J. Kahng et al., Phys. Rev. Lett. 80, 4931 (1998).