Scanning tunneling microscopy of semiconductor surfaces

Surface Science Reports

Volumn 26, Issue 3-6, 1996, Pages 61-204

  Kubby, J A ^a   Boland, J J ^b  

^a XEROX CORPORATION   (United States)

^b University of North Carolina at Chapel Hill   (United States)

Author keywords

Gallium arsenide; Germanium; Scanning tunneling microscopy; Semiconductors; Silicon; Surface reconstructions; Tunneling spectroscopy

Indexed keywords

CHEMISTRY; ELECTRONIC PROPERTIES; GERMANIUM; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; SURFACE TREATMENT;

LOW INDEX SURFACES; SEMICONDUCTOR SURFACES; ULTRAHIGH VACUUM;

SURFACES;

EID: 0030380605     PISSN: 01675729     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-5729(97)80001-5     Document Type: Review

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