Scanning tunneling microscopy study of the hydrogen-terminated n- and p-type Si(001) surfaces

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 346-351

  Fukutome, Hidenobu ^a   Takano, Keizo ^a   Yasuda, Haruyuki ^a   Maehashi, Kenzo ^a   Hasegawa, Shigehiko ^a   Nakashima, Hisao ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; HYDROGEN; PASSIVATION; SEMICONDUCTOR DOPING; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

SCANNING TUNNELING SPECTROSCOPY (STS); SURFACE RECONSTRUCTION;

SEMICONDUCTING SILICON;

EID: 0032099693     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00082-8     Document Type: Article

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