Ultrahigh-vacuum contactless capacitance-voltage characterization of hydrogen-terminated-free silicon surfaces

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4504-4508

  Yoshida, Toshiyuki ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Discrete state; Hydrogen termination; Silicon; UHV contactless C V

Indexed keywords

ANNEALING; CAPACITANCE; CHARACTERIZATION; DENSITY (OPTICAL); ELECTRIC POTENTIAL; FERMI LEVEL; OPTIMAL CONTROL SYSTEMS; PASSIVATION; UHV POWER TRANSMISSION;

DISCRETE SURFACE; FERMI LEVEL PINNING; HYDROGEN-TERMINATED SILICON SURFACES; OPTIMAL TREATMENT; SILICON DANGLING; STATE PEAK; U-SHAPED BACKGROUND DISTRIBUTION; ULTRA HIGH VACUUM(UHV) CONTACTLESS CAPACITANCE-VOLTAGE TECHNIQUE;

SILICON;

EID: 0034226479     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4504     Document Type: Article

References (11)

1. Y. Morita and H. Tokumoto: Appl. Phys. Lett. 67 (1995) 2654.
2. D. Huang and Y. Yamamoto: Jpn. J. Appl. Phys. 35 (1996) 3734.
3. X. Blase, A. J. R. da Silva, X. Zhu and S. G. Louie: Phys. Rev. B50 (1994) 8102.
4. K. Yamamoto and M. Hasegawa: J. Vac. Sci. & Technol. B12 (1994) 2493.
5. T. Yoshida, H. Hasegawa and T. Sakai: Jpn. J. Appl. Phys. 38 (1999) 2349.
6. F. Goos and H. Hänchen: Ann. Phys. 6 (1947) 344.
7. T. Hashizume, S. Koyanagi and H. Hasegawa: J. Vac. Sci. & Technol. B14 (1996) 2872.
8. G. S. Higashi, Y. J. Chabal, G. W. Trucks and K. Raghavachari: Appl. Phys. Lett. 56 (1990) 656.
9. Y. J. Chabal, G. S. Higashi, K. Raghavachari and V. A. Burrows: J. Vac. Sci. & Technol. A7 (1989) 2104.
10. Y. Morita and H. Tokumoto: J. Surf. Sci. Soc. Jpn. 20 (1999) 680.
11. Y. J. Chabal: Surf. Sci. Rep. 8 (1988) 211.