Theoretical study of isolated dangling bonds, dangling bond wires, and dangling bond clusters on a H:Si (001) - (2×1) surface

Physical Review B - Condensed Matter and Materials Physics

Volumn 76, Issue 4, 2007, Pages

  Raza, Hassan ^a  

^a Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34447259057     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.76.045308     Document Type: Article

References (46)

1. J. Bardeen, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.71.717 71, 717 (1947).
2. L. F. Wagner and W. E. Spicer, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.28.1381 28, 1381 (1972).
3. J. A. Stroscio, R. M. Feenstra, and A. P. Fein, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.57.2579 57, 2579 (1986).
4. R. J. Hamers, R. M. Tromp, and J. E. Demuth, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.34.5343 34, 5343 (1986).
5. R. J. Hamers and J. E. Demuth, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.60.2527 60, 2527 (1988).
6. R. Wolkow and P. Avouris, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.60.1049 60, 1049 (1988).
7. R. A. Wolkow, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.74. 4448 74, 4448 (1995).
8. H. N. Waltenburg and J. T. Yates, Jr., Chem. Rev. (Washington, D.C.) CHREAY 0009-2665 10.1021/cr00037a600 95, 1589 (1995).
9. R. J. Hamers and Y. Wang, Chem. Rev. (Washington, D.C.) CHREAY 0009-2665 10.1021/cr950213k 96, 1261 (1996).
10. S. Watanabe, Y. A. Ono, T. Hashizume, and Y. Wada, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.54.R17308 54, R17308 (1996).
11. T. Hitosugi, T. Hashizume, S. Heike, Y. Wada, S. Watanabe, T. Hasegawa, and K. Kitazawa, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 10.1007/s003390051224 66, S695 (1998).
12. D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann, K. Evans-Lutterodt, and G. Timp, Nature (London) NATUAS 0028-0836 10.1038/21602 399, 758 (1999).
13. P. Zhang, E. Tevaarwerk, B.-N. Park, D. E. Savage, G. K. Celler, I. Knezevic, P. G. Evans, M. A. Eriksson, and M. G. Lagally, Nature (London) NATUAS 0028-0836 10.1038/nature04501 439, 703 (2006).
14. H. Raza, K. H. Bevan, and D. Kienle, arXiv:cond-mat/0607226 (unpublished).
15. M. McEllistrem, G. Haase, D. Chen, and R. J. Hamers, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.70.2471 70, 2471 (1993).
16. See, for example, S. Mahapatra, M. Alam, P. Bharath Kumar, T. R. Dalei, and S. Saha, Tech. Dig. - Int. Electron Devices Meet. TDIMD5 0163-1918 2004, 105.
17. N. Z. Butt, A. Chang, R. Bashir, H. Raza, J. Liu, and D.-L. Kwong, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2186114 88, 112901 (2006).
18. G. P. Lopinski, D. D. M. Wayner, and R. A. Wolkow, Nature (London) NATUAS 0028-0836 10.1038/35017519 406, 48 (2000).
19. T.-C. Shen, C. Wang, G. C. Abeln, J. R. Tucker, J. W. Lyding, Ph. Avouris, and R. E. Walkup, Science SCIEAS 0036-8075 10.1126/science.268.5217. 1590 268, 1590 (1995).
20. K. Stokbro, C. Thirstrup, M. Sakurai, U. Quaade, Ben Yu-Kuang Hu, F. Perez-Murano, and F. Grey, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.80.2618 80, 2618 (1998).
21. Z. Liu, L. C. Feldman, N. H. Tolk, Z. Zhang, and P. I. Cohen, Science SCIEAS 0036-8075 10.1126/science.1124529 312, 1024 (2006).
22. P. G. Piva, G. A. DiLabio, J. L. Pitters, J. Zikovsky, M. Rezeq, S. Dogel, W. A. Hofer, and R. A. Wolkow, Nature (London) NATUAS 0028-0836 10.1038/nature03563 435, 658 (2005).
23. M. McEllistrem, M. Allgeier, and J. J. Boland, Science SCIEAS 0036-8075 10.1126/science.279.5350.545 279, 545 (1998).
24. T. Hitosugi, S. Heike, T. Onogi, T. Hashizume, S. Watanabe, Z.-Q. Li, K. Ohno, Y. Kawazoe, T. Hasegawa, and K. Kitazawa, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.82.4034 82, 4034 (1999).
25. D. J. Lepoine, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.6.436 6, 436 (1972).
26. E. Artacho and Felix Yndurain, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.62.2491 62, 2491 (1989).
27. M. Xiao, I. Martin, E. Yablonovitch, and H. W. Jiang, Nature (London) NATUAS 0028-0836 10.1038/nature02727 430, 435 (2004).
28. M. C. Hersam, N. P. Guisinger, J. Lee, K. Cheng, and J. W. Lyding, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1431689 80, 201 (2002).
29. M. C. Hersam, N. P. Guisinger, and J. W. Lyding, Nanotechnology NNOTER 0957-4484 10.1088/0957-4484/11/2/306 11, 70 (2000).
30. M. Cakmak and G. P. Srivastava, Surf. Sci. SUSCAS 0039-6028 532, 556 (2003).
31. G. P. Srivastava, Theoretical Modelling of Semiconductor Surfaces (World Scientific, River Edge, NJ, 1999).
32. J. Cerda and F. Soria, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.61. 7965 61, 7965 (2000).
33. D. Kienle, K. H. Bevan, G.-C. Liang, L. Siddiqui, J. I. Cerda, and A. W. Ghosh, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2259820 100, 043715 (2006).
34. G.-C. Liang and A. W. Ghosh, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.95.076403 95, 076403 (2005).
35. M. S. Hybertsen and S. G. Louie, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.55.1418 55, 1418 (1985).
36. M. Rohlfing, P. Krüger, and J. Pollmann, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.48.17791 48, 17791 (1993).
37. T. Rakshit, G.-C. Liang, A. W. Ghosh, and S. Datta, Nano Lett. NALEFD 1530-6984 4, 22 (2004).
38. A. Ramstad, G. Brocks, and P. J. Kelly, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.51.14504 51, 14504 (1995).
39. M. J. Frisch, G. W. Trucks, H. B. Schlegel, G. E. Scuseria, M. A. Robb, J. R. Cheeseman, J. A. Montgomery, Jr., T. Vreven, K. N. Kudin, J. C. Burant, J. M. Millam, S. S. Iyengar, J. Tomasi, V. Barone, B. Mennucci, M. Cossi, G. Scalmani, N. Rega, G. A. Petersson, H. Nakatsuji, M. Hada, M. Ehara, K. Toyota, R. Fukuda, J. Hasegawa, M. Ishida, T. Nakajima, Y. Honda, O. Kitao, H. Nakai, M. Klene, X. Li, J. E. Knox, H. P. Hratchian, J. B. Cross, C. Adamo, J. Jaramillo, R. Gomperts, R. E. Stratmann, O. Yazyev, A. J. Austin, R. Cammi, C. Pomelli, J. W. Ochterski, P. Y. Ayala, K. Morokuma, G. A. Voth, P. Salvador, J. J. Dannenberg, V. G. Zakrzewski, S. Dapprich, A. D. Daniels, M. C. Strain, O. Farkas, D. K. Malick, A. D. Rabuck, K. Raghavachari, J. B. Foresman, J. V. Ortiz, Q. Cui, A. G. Baboul, S. Clifford, J. Cioslowski, B. B. Stefanov, G. Liu, A. Liashenko, P. Piskorz, I. Komaromi, R. L. Martin, D. J. Fox, T. Keith, M. A. Al-Laham, C. Y. Peng, A. Nanayakkara, M. Challacombe, P. M. W. Gill, B. Johnson, W. Chen, M. W. Wong, C. Gonzalez, and J. A. Pople, GAUSSIAN 03, Revision B.03, Gaussian, Inc., Wallingford, CT, 2004.
40. T. Blomquist and G. Kirczenow, Nano Lett. NALEFD 1530-6984 10.1021/nl051995s 6, 61 (2006).
41. R. Dennington II, T. Keith, J. Millam, K. Eppinnett, W. L. Hovell, and R. Gilliland, GAUSSVIEW, Version 3.0, Semichem, Inc., Shawnee Mission, KS, 2003.
42. R. I. G. Uhrberg, G. V. Hansson, J. M. Nicholls, and S. A. Flodström, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.24.4684 24, 4684 (1981).
43. L. S. O. Johansson, R. I. G. Uhrberg, P. Martensson, and G. V. Hansson, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.42.1305 42, 1305 (1990).
44. R. F. Pierret, Advanced Semiconductor Fundamentals (Addison-Wesley, Reading, MA, 1989), Sec. 504.
45. H. Raza, arXiv:cond-mat/0703236 (unpublished).
46. nanoHUB.org is a web site dedicated to advancing nanotechnology through theory, modeling, and simulation for research and education.