Defect mediated extraction in InAs/GaAs quantum dot solar cells

Solar Energy Materials and Solar Cells

Volumn 102, Issue , 2012, Pages 142-147

  Willis, S M ^a   Dimmock, J A R ^b   Tutu, F ^c   Liu, H Y ^c   Peinado, M G ^d   Assender, H E ^a   Watt, A A R ^a   Sellers, I R ^a,e  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b SHARP LABORATORIES OF EUROPE LTD   (United Kingdom)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

^d CASEM   (Spain)

^e UNIVERSITY OF OKLAHOMA   (United States)

Author keywords

Carrier escape; Defect; Quantum dot solar cells

Indexed keywords

BULK SYSTEM; CARRIER ESCAPES; CARRIER EXTRACTION; CARRIER LOCALIZATION; EXPERIMENTAL EVIDENCE; INAS QUANTUM DOTS; INAS/GAAS; INTRINSIC LAYER; LIGHT RESPONSE; LONG WAVELENGTH; NON-RADIATIVE; POTENTIAL BARRIERS; QUANTUM DOT SOLAR CELLS; RADIATIVE RECOMBINATION; THEORETICAL MODELS;

DEFECTS; INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84861099937     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2012.03.010     Document Type: Article

References (24)

1. D.J. Mowbray, and M.S. Skolnick New physics and devices based on self-assembled semiconductor quantum dots Journal of Physics D: Applied Physics 38 2005 2059 2076
2. I.R. Sellers, H.Y. Liu, K.M. Groom, D.T. Childs, D. Robbins, T.J. Badcock, M. Hopkinson, D.J. Mowbray, and M.S. Skolnick 1.3 μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density Electronics Letters 40 2004 1412 1414
3. I.R. Sellers, W.-S. Tan, K. Smith, S. Hooper, S. Day, and M. Kauer Wide depletion width of 1 eV GaInNAs solar cells by thermal annealing Applied Physics Letters 99 2011 151111 151113
4. J. Nelson, The physics of solar cells. Photons In, Electrons Out: Basic Principles of PV. 2003. Imperial College Press, pp. 17-39 (Chapter 2)
5. A. Marti, N. Lopez, E. Antolin, E. Canovas, A. Luque, C.R. Stanley, C.D. Farmer, and P. Diaz Emitter degradation in quantum dot intermediate band solar cells Applied Physics Letters 90 2007 233510 233512
6. H.Y. Liu, I.R. Sellers, M. Gutierrez, K.M. Groom, W.M. Soong, M. Hopkinson, and J.P.R. David Influences of spacer layer growth temperature on multilayer InAs/GaAs quantum dot structures Journal of Applied Physics 96 2004 1988 1992
7. H.Y. Liu, I.R. Sellers, T.J. Badcock, D.J. Mowbray, M.S. Skolnick, K.M. Groom, M. Gutiérrez, M. Hopkinson, J.S. Ng, J.P.R. David, and R. Beanland Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer Applied Physics 85 2004 704 706
8. D. Guimard, R. Morihara, D. Bordel, K. Tanabe, Y. Wakayama, M. Nishioka, and Y. Arakawa Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent without degradation of open circuit voltage Applied Physics Letters 96 2010 203507 203509
9. 0.8As cap layer Applied Physics Letters 97 2010 183104 183106
10. 0.5As quantum dot solar cells and the influence on the open circuit voltage Applied Physics Letters 97 2010 123505 123508
11. A. Marti, N. Lopez, E. Antolin, E. Canovas, A. Luque, C.R. Stanley, C.D. Farmer, and P. Diaz Emitter degradation in quantum dot intermediate band solar cells Applied Physics Letters 90 2007 233510 233512
12. S.M. Hubbard, C.G. Bailey, C.D. Cress, S. Polly, J. Clark, D.V. Forbes, R.P. Raffaelle, S.G. Bailey, D.M. Wilt, Short Circuit Current Enhancement of GaAs solar cells using strain compensated InAs quantum dots, in: proceedings of the 33 IEEE Photovoltaic Specialist Conference, IEEE, San Diego, USA, 2008.
13. University of Colorado Department of Electrical, Computer, and Energy Engineering, Principles of Semiconductor Devices, Temperature Dependence of the Energy Bandgap. 〈http://ecee.colorado.edu/∼bart/book/eband5.htm〉 (accessed 22.07.11)
14. I.R. Sellers, H.Y. Liu, T.J. Badcock, M. Gutierrez, M. Hopkinson, and M.S. Skolnick Lasing and spontaneous emission characteristics of 1.3 μm In(Ga)As quantum-dot lasers Physica E 26 2005 382 385
15. T.J. Badcock, R. Royce, Q. Jiang, H.Y. Liu, K.M. Groom, M. Hopkinson, D.J. Mowbray, and M.S. Skolnick Low threshold current density and negative characteristic temperature 1.3 μm InAs self-assembled quantum dot lasers Applied Physics Letters 90 2007 111102 111105
16. B. Monemar, and B.E. Sernelius Defect related issues in the current roll-off in InGaN based light emitting diodes Applied Physics Letters 91 2007 181103 181105
17. N.I. Bochkareva, V.V. Voronenkov, R.I. Gorbunov, A.S. Zubrilov, Y.S. Lelikov, P.E. Latyshev, Y.T. Rebane, A.I. Tsyuk, and G. Shreter Defect-related tunneling mechanism of efficiency droop in III-nitride light emitting diodes Applied Physics Letters 96 2010 133502 133504
18. V. Aroutiounian, S. Petrosyan, A. Khachatryan, and K. Touryan Quantum dot solar cells Journal of Applied Physics 89 2001 2268 2271
19. W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, and A.D. Wieck Probing the bandstructure of InAs/GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy Applied Physics Letters 92 2008 193111 193113
20. L.Ya. Karachinsky, S. Pellegrini, G.S. Buller, A.S. Shkolnik, N.Yu. Gordeev, V.P. Evtikhiev, and V.B. Novikov Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misoriented substrates Applied Physics Letters 84 2004 7 9
21. J. Ibanez, R. Leon, D.T. Vu, S. Chaparro, S.R. Johnson, C. Navarro, and Y.H. Zhang Tunneling carrier escape from InAs self-assembled quantum dots Applied Physics Letters 79 2001 2013 2015
22. M.A. Green, Third generation photovoltaics. Impurity Photovoltaics and Multiband Cells. 2003. Springer, pp. 95-107 (Chapter 8)
23. H.W. Hillhouse, and M.C. Beard Solar cells from colloidal nanocrystals: Fundamentals, materials, devices, and economics Current Opinion in Collod and Interface Science 14 2009 245 259
24. J. Tang, and E.H. Sargent Infrared Colloidal Quantum Dots for Photovoltaics: Fundamentals and Recent Progress Advanced Materials 23 2010 12 29