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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 26, Issue 1-4, 2005, Pages 382-385

Lasing and spontaneous emission characteristics of 1.3 μm In(Ga)As quantum-dot lasers

(8) Sellers, I R a Liu, H Y a Badcock, T J a Groom, K M a Mowbray, D J a Gutierrez M a Hopkinson, M a Skolnick, M S a

a UNIVERSITY OF SHEFFIELD (United Kingdom)

Author keywords

Electroluminescence; In(Ga)As; Quantum dot laser

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTROLUMINESCENCE; GROUND STATE; HETEROJUNCTIONS; LASER BEAM EFFECTS; MOLECULAR BEAM EPITAXY; MULTILAYERS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; REFLECTION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SPONTANEOUS EMISSION; TRANSMISSION ELECTRON MICROSCOPY;

IN(GA)AS; LASER STRUCTURES; QUANTUM DOT LASERS; THERMAL REDISTRIBUTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 13444262185 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2004.08.007 Document Type: Conference Paper

Times cited : (7)

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