Probing the band structure of InAsGaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy

Applied Physics Letters

Volumn 92, Issue 19, 2008, Pages

  Lei, W ^a,b   Offer, M ^a   Lorke, A ^a   Notthoff, C ^a   Meier, C ^a   Wibbelhoff, O ^a   Wieck, A D ^c,d  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c CRHEA CNRS   (France)

^d RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE MEASUREMENT; GROUND STATE; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; VOLTAGE MEASUREMENT;

CAPACITANCE VOLTAGE SPECTROSCOPY; ENERGETIC DISTANCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 44049091600     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2920439     Document Type: Article

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