Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates

Applied Physics Letters

Volumn 84, Issue 1, 2004, Pages 7-9

  Karachinsky, L Ya ^a,b   Pellegrini, S ^a   Buller, G S ^a   Shkolnik, A S ^b   Gordeev, N Yu ^b   Evtikhiev, V P ^b   Novikov, V B ^c  

^a HERIOT WATT UNIVERSITY   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

^c ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; AVALANCHE DIODES; BANDPASS FILTERS; GROUND STATE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PHOTONS; Q SWITCHING; RADIATION; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS;

ENERGY STATE DENSITY; MISORIENTATION ANGLES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0942278268     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1637962     Document Type: Article

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