Wide depletion width of 1 eV GaInNAs solar cells by thermal annealing

Applied Physics Letters

Volumn 99, Issue 15, 2011, Pages

  Sellers, I R ^a,b   Tan, W S ^a   Smith, K ^a   Hooper, S ^a   Day, S ^a   Kauer, M ^a  

^a SHARP LABORATORIES OF EUROPE LTD   (United Kingdom)

^b UNIVERSITY OF OKLAHOMA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY FLUCTUATION; EXTERNAL QUANTUM EFFICIENCY; GAINNAS; HIGH QUALITY; LOW BACKGROUND; MATERIAL QUALITY; MINORITY-CARRIER COLLECTION; RADIATIVE RECOMBINATION; THERMAL-ANNEALING;

CARRIER CONCENTRATION; GALLIUM NITRIDE; RAPID THERMAL ANNEALING;

NANOSTRUCTURED MATERIALS;

EID: 80054997764     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3648110     Document Type: Article

References (16)

1. J. F. Geisz and D. J. Friedman, Semicond. Sci. Technol. 17, 769 (2002). 10.1088/0268-1242/17/8/305
2. H. Cotal, C. Fetzer, J. Biosvert, G. Kinsey, R. King, P. Herbert, H. Yoon, and N. H. Karan, Energy Environ. Sci. 2, 174 (2009). 10.1039/b809257e
3. X. Kong, A. Tampert, E. Tournié, and K. H. Ploog, Appl. Phys. Lett. 87, 171901 (2005). 10.1063/1.2108108
4. E. V. K. Roa, A. Ougazzaden, Y. Le Bellego, and M. Juhel, Appl. Phys. Lett. 72, 1409 (1998). 10.1063/1.120579
5. D. B. Jackrel, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, Jr., J. Appl. Phys. 101, 114916 (2007). 10.1063/1.2744490
6. D. Jackrel, InGaAs and GaInNAs(Sb) 1064 nm photodetectors and solar cells on GaAs substrates, Ph.D. dissertation (Stanford University, 2005).
7. W. Li, M. Pessa, T. Ahlgren, and J. Decker, Appl. Phys. Lett. 79, 1094 (2001). 10.1063/1.1396316
8. S. R. Kurtz, A. A. Allerman, C. H. Seager, R. M. Sieg, and E. D. Jones, Appl. Phys. Lett. 77, 400 (2000). 10.1063/1.126989
9. S. R. Kurtz, A. A. Allerman, E. D. Jones, J. M. Gee, J. J. Bana, and B. E. Hammons, Appl. Phys. Lett. 74, 729 (1999). 10.1063/1.123105
10. J. Nelson, The Physics of Solar Cells (Imperial College Press, UK, 2003), pp. 222-224.
11. W. Li and M. Pessa, Phys. Rev. B. 64, 113308 (2001). 10.1103/PhysRevB.64. 113308
12. N. Nuytten, M. Hayne, B. Bansel, H. Y. Liu, M. Hopkinson, and V. V. Moshchalkov, Phys. Rev. B. 84, 045302 (2011). 10.1103/PhysRevB.84.045302
13. R. A. Mair, J. Y. Lin, H. X. Jiang, E. D. Jones, A. A. Allerman, and S. R. Kurtz, Appl. Phys. Lett. 76, 188 (2000). 10.1063/1.125698
14. B. M. Keyes, J. F. Giesz, P. C. Dippo, R. Reedy, C. Kramer, D. J. Friedman, S. R. Kurtz, and J. M. Olsen, AIP Conf. Proc. 462, 511 (1999). 10.1063/1.57997
15. P. Senellart, E. Peter, J. Hours, A. Cavanna, and J. Bloch, Phys. Rev. B 72, 115302 (2008). 10.1103/PhysRevB.72.115302
16. Z. Xu, Y. Zhang, A. Tackeuchi, Y. Horikoshi, and J. M. Huam, Appl. Phys. Lett. 92, 063103 (2008). 10.1063/1.2839312