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Journal of Applied Physics

Volumn 107, Issue 4, 2010, Pages

Analysis of charge sensitivity and low frequency noise limitation in silicon nanowire sensors

(5) Lee, Jae Woo a,b Jang, Doyoung a,b Kim, Gyu Tae b Mouis, Mireille a Ghibaudo, Ǵrard a

a GRENOBLE INSTITUTE OF TECHNOLOGY (France)

b Korea University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LENGTH; CHARGE SENSITIVITY; DE-TRAPPING; DOPING CONCENTRATION; LF NOISE; LOW-FREQUENCY NOISE; MODELING APPROACH; NANOWIRE SENSORS; NANOWIRE SURFACE; PER UNIT; RELATIVE CONDUCTANCE; SILICON NANOWIRES;

NANOWIRES; SELF ASSEMBLY; SENSITIVITY ANALYSIS;

NANOSENSORS;

EID: 77749264680 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3294961 Document Type: Article

Times cited : (27)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.