A charge-based compact model for predicting the current-voltage and capacitance-voltage characteristics of heavily doped cylindrical surrounding-gate MOSFETs

Solid-State Electronics

Volumn 53, Issue 1, 2009, Pages 49-53

  Liu, Feilong ^a   Zhang, Jian ^a   He, Frank ^a   Liu, Feng ^a   Zhang, Lining ^a   Chan, Mansun ^b  

^a PEKING UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Circuit simulation; Compact model; Doping effect; MOSFET performance; Surrounding gate MOSFET

Indexed keywords

CAPACITANCE; CIRCUIT SIMULATION; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; FORECASTING; MOSFET DEVICES; POISSON EQUATION; POWDERS; THREE DIMENSIONAL;

3D NUMERICAL SIMULATIONS; CAPACITANCE VOLTAGES; CLOSED FORMS; COMPACT MODEL; COMPACT MODELS; CURRENT CONTINUITIES; CURRENT EXPRESSIONS; DEPLETION APPROXIMATIONS; DEVELOPED MODELS; DOPING EFFECT; FIXED CHARGES; GEOMETRICAL PARAMETERS; INVERSION CHARGES; MODEL PREDICTIONS; MOS FETS; MOSFET PERFORMANCE; PARTITION METHODS; SATURATION REGIONS; SMOOTH FUNCTIONS; SURROUNDING-GATE MOSFET;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 57649088299     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.09.016     Document Type: Article

References (18)

1. Auth C.P., and Plummer J.D. Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFETs. IEEE Electron Dev Lett 18 2 (1997) 74-76
2. Oh S.-H., Monore D., and Hergenrother J.M. Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs. IEEE Electron Dev Lett 21 9 (2000) 445-447
3. Gnani E, Reggiani S, Rudan M, Baccarani G. Design considerations and comparative investigation of ultra-thin SOI, doublegate and cylindrical nanowire FETs. In: Proceedings of IEEE ESSDERC; 2006. p. 371-4.
4. Jiménez D., Iñiguez B., Suñé J., Marsal L.F., Pallarès J., Roig J., et al. Continuous analytic current-voltage model for surrounding gate MOSFETs. IEEE Electron Dev Lett 25 8 (2004) 571-573
5. Moldovan O., Iñiguez B., Jiménez D., and Roig J. Analytical charge and capacitance models of undoped cylindrical surrounding-gate MOSFETs. IEEE Trans Electron Dev 54 1 (2007) 162-165
6. He J., Zhang X., Zhang G., Chan M., and Wang Y. A carrier-based analytic DCIV model for long channel undoped cylindrical surrounding-gate MOSFETs. Solid-State Electron 50 4 (2006) 416-421
7. He J., Liu F., Bian W., Feng J., Zhang J., and Zhang X. An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with a finite doping body. Semicond Sci Technol 22 5 (2007) 671-677
8. Moldovan O., Cerdeira A., Jiménez D., Raskin J., Kilchytska V., Flandre D., et al. Compact model for highly-doped double-gate SOI MOSFETs targeting baseband analog applications. Solid-State Electron 51 4 (2007) 655-661
9. Chiang M., Lin J., Kim K., and Chuang C. Random dopant fluctuation in limited-width FinFET technologies. IEEE Trans Electron Dev 54 8 (2007) 2055-2060
10. Colinge J.P. Multiple-gate SOI MOSFETs. Solid-State Electron 48 6 (2004) 897-905
11. Arora N. MOSFET models for VLSI circuit simulation theory and practice (1993), Springer-Verlag
12. Iñiguez B., Jiménez D., Roig J., Hamid H.A., Marsal L.F., and Pallares J. Explicit continuous model for long-channel undoped surrounding-gate MOSFETs. IEEE Trans Electron Dev 52 8 (2005) 1868-1873
13. Pao H.C., and Sah C.T. Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors. Solid-State Electron 9 10 (1966) 927-937
14. Oh S.Y., Ward D.E., and Dutton R.W. Transient analysis of MOS transistor. IEEE J Solid-State Circ SSC-15 4 (1980) 636-643
15. In: Tsividis Y. (Ed). Operation and modeling of the MOS transistor (1999), McGraw-Hill, Boston (MA)
16. TCAD sentaurus device user's manual. Synopsys. Mountain View (CA); 2005.
17. Liu F., He J., Zhang L., Zhang J., Hu J., Ma C., et al. A charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped body. IEEE Trans Electron Dev 55 8 (2008) 2187-2194
18. van Dort M.J., Woerlee P.H., and Walker A.J. A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions. Solid-State Electron 37 3 (1994) 411-414