Induced epitaxy for growth of aligned indium nitride nano- and microrods

Crystal Growth and Design

Volumn 10, Issue 9, 2010, Pages 3887-3891

  Simpkins, B S ^a   Kansal, Aman D ^b   Pehrsson, P E ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b THOMAS JEFFERSON HIGH SCHOOL FOR SCIENCE AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

C-PLANE SAPPHIRE SUBSTRATES; CATALYST-FREE; CHEMICAL VAPOR DEPOSITION REACTORS; CRYSTAL MORPHOLOGIES; DIPOLE-DIPOLE; EPITAXIAL ALIGNMENT; GROWTH MECHANISMS; GROWTH PRODUCTS; HIGH-ASPECT RATIO; INDIUM NITRIDE; MICRO-SCALES; MICRORODS; RICH CONDITIONS; WURTZITES;

ALIGNMENT; ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GROWTH TEMPERATURE; INDIUM; NANORODS; NITRIDES; ZINC SULFIDE;

SEMICONDUCTOR GROWTH;

EID: 77957905704     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg100221w     Document Type: Article

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