Effects of temperature and HCl:NH3 flow ratio on the growth of GaN nanorods

Journal of Alloys and Compounds

Volumn 480, Issue 2, 2009, Pages 853-856

  Moon, J Y ^a   Kwon, H Y ^a   Choi, Y J ^a   Shin, M J ^a   Yi, S N ^a   Yun, Y J ^b   Kim, S ^b   Ha, D H ^b   Sug, J Y ^c  

^a Korea Maritime University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Kyungpook National University   (South Korea)

Author keywords

GaN; HVPE; Nanorods; Nanostructure

Indexed keywords

ALN; EDS MEASUREMENTS; EFFECTS OF TEMPERATURE; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; FLOW RATIOS; GAN; GAN NANORODS; GAS-FLOW RATIO; GROWTH OF GAN; HIGH DENSITY; HVPE; HYDRIDE VAPOR PHASE EPITAXY; SI (1 1 1); XRD PATTERNS;

CRYSTAL GROWTH; GALLIUM NITRIDE; NANORODS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SUBSTRATES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

GALLIUM ALLOYS;

EID: 67349248500     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.02.078     Document Type: Article

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