Growth and applications of HVPE-GaN nanorods

Metals and Materials International

Volumn 10, Issue 4, 2004, Pages 367-373

  Kang, Tae Won ^a   Kim, Hwa Mok ^a  

^a Dongguk University   (South Korea)

Author keywords

Field emission display; GaN; HVPE; Light emitting diode; Nanorods

Indexed keywords

ELECTRIC RECTIFIERS; ELECTRON EMISSION; FIELD EMISSION DISPLAYS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; LIGHT EMITTING DIODES; NANORODS; NITRIDES; RECTIFYING CIRCUITS; SAPPHIRE; SEMICONDUCTOR JUNCTIONS;

CURRENT RECTIFIERS; ELECTRICAL TRANSPORT MEASUREMENTS; ELECTRON EMISSION PROPERTIES; EMISSION WAVELENGTH; HIGH BREAKDOWN VOLTAGE; HVPE; HYDRIDE VAPOR PHASE EPITAXY; SAPPHIRE SUBSTRATES;

WIDE BAND GAP SEMICONDUCTORS;

EID: 11144257175     PISSN: 15989623     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF03185987     Document Type: Article

References (28)

1. S. Nakamura, S. J. Pearton, and G. Fasol, The Blue Laser Diode: The Complete Story 7-9, Springer-Verlag, Berlin (2000).
2. J. H. Choi, S. J. Lim, M. S. Cho, N. H. Cho, S. J. Chung, and C. S. Sohn, Met. Mater. -Int. 9, 77 (2003).
3. S. J. Pearton and F. Ren, Adv. Mater. 12, 1571 (2000).
4. W. Han, S. Fan, Q. Li, and Y. Hu, Science 277, 1287 (1997).
5. W. Han, P. Redlich, F. Ernst, and M. Ruhle, Appl. Phys. Lett. 76, 652 (2000).
6. C. C. Chen and C. C. Yeh, Adv. Mater. 12, 738 (2000).
7. J. Y. Li, X. L. Chen, Z. Y. Qiao, Y. G. Cao, and Y. C. Lan, J. Cryst. Growth 213, 408 (2000).
8. G. S. Cheng, L. D. Zhang, Y. Zhu, G. T. Fei, and L. Li, Appl. Phys. Lett. 75, 2455 (1999).
9. M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino, Jpn. J. Appl. Phys. 36, L459 (1997).
10. X. Duan, Y. Huang, Y. Cui, J. Wang, and C. M. Lieber, Nature 409, 66 (2001).
11. Y. Huang, X. Duan, Y. Cui, and C. M. Lieber, Nano Lett. 2, 101 (2002).
12. M. S. Gudiksen, L. J. Lauhon, J. Wang, D. C. Smith, and C. M. Lieber, Nature 415, 617 (2002).
13. H.-M. Kim, D. S. Kim, Y. S. Park, D. Y. Kim, T. W. Kang, and K. S. Chung, Adv. Mater. 14, 991 (2002).
14. H.-M. Kim, D. S. Kim, D. Y. Kim, T. W. Kang, Y. H. Cho, and K. S. Chung, Appl. Phys. Lett. 81, 2193 (2002).
15. H.-M. Kim, T. W. Kang, K. S. Chung, J. P. Hong, and W. B. Choi, Chem. Phys. Lett. 377, 491 (2003).
16. W. A. De Heer, A. Chatelain, and D. Ugarte, Science 270, 1179 (1995).
17. Q. H. Wang, T. D. Corrigan, J. Y. Dai, R. P. H. Chang, and A. R. Krauss, Appl. Phys. Lett. 70, 3308 (1997).
18. P. G. Collins and A. Zettl, Phys. Rev. B 55, 9391 (1997).
19. S. S. Fan, M. G. Chapline, N. R. Franklin, T. W. Tombler, A. M. Cassell, and H. J. Dai, Science 283, 512 (1999).
20. X. P. Xu and G. R. Brandes, Appl. Phys. Lett. 74, 2549 (1999).
21. J. I. Pankov and T. D. Moustakas, Gallium Nitride (GaN) I: Semiconductor and Semimetals 50, p. 259, Academic Press, San Diego, CA, USA (1998).
22. Y. Cui, X. Duan, J. Hu, and C. M. Lieber, J. Phys. Chem. B 104, 5213 (2000).
23. H.-M. Kim, T. W. Kang, and K. S. Chung, Adv. Mater. 15, 567 (2003).
24. H.-M. Kim, Y.-H. Cho, and T. W. Kang, Adv. Mater. 15, 232 (2003).
25. N. Grandjean, J. Massies, M. Leroux, and P. Lorenzini, Appl. Phys. Lett. 72, 82 (1998).
26. V. Derycke, R. Martel, J. Appenzeller, and P. Avouris, Nano Lett. 1, 453 (2001).
27. C. W. Zhou, J. Kong, E. Yenilmez, and H. J. Dai, Science 290, 1552 (2000).
28. J. Hu, M. Ouyang, P. Yang, and C. M. Lieber, Nature 399, 48 (1999).