Surface morphology of GaN nanorods grown by catalyst-free hydride vapor phase epitaxy

Applied Surface Science

Volumn 256, Issue 4, 2009, Pages 1078-1081

  Sohn, Yuri ^a   Kim, Chinkyo ^a  

^a Kyung Hee University   (South Korea)

Author keywords

GaN; Hydride vapor phase epitaxy; Nanorods

Indexed keywords

ACTIVATION ENERGY; BOATS; GALLIUM NITRIDE; HYDRIDES; III-V SEMICONDUCTORS; NANOCATALYSTS; NANORODS; SAPPHIRE; SUBSTRATES; SURFACE MORPHOLOGY; VAPOR PHASE EPITAXY;

C-PLANE SAPPHIRE SUBSTRATES; GROWTH OF GAN; HYDRIDE VAPOR PHASE EPITAXY; PRE-TREATMENT; PRETREATMENT EFFECTS; RADIAL DIRECTION; RATE DETERMINING STEP; SUBSTRATE TEMPERATURE;

GALLIUM;

EID: 70749153897     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.05.129     Document Type: Article

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