Highly ordered catalyst-free and mask-free GaN nanorods on r-plane sapphire

Nanotechnology

Volumn 20, Issue 7, 2009, Pages

  Aschenbrenner, T ^a   Kruse, C ^a   Kunert, G ^a   Figge, S ^a   Sebald, K ^a   Kalden, J ^a   Voss, T ^a   Gutowski, J ^a   Hommel, D ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE GAN; ALN; CATALYST-FREE; DEGREE OF ORDERINGS; GAN LAYERS; GAN NANORODS; METAL-ORGANIC VAPOR-PHASE EPITAXIES; MICRO PHOTOLUMINESCENCES; NUCLEATION CENTERS; PLANE SAPPHIRES; SELF-ORGANIZED; STRUCTURAL PERFECTIONS; TWO-DIMENSIONAL;

CATALYSIS; CATALYSTS; CORUNDUM; CRYSTAL GROWTH; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANORODS; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

GALLIUM; GALLIUM NITRIDE; NANOROD; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL MODIFICATION; CHEMICAL PARAMETERS; CHEMICAL STRUCTURE; DENSITY; GROWTH; MOLECULAR MECHANICS; NANOCATALYST; PRIORITY JOURNAL; REACTOR; VAPOR;

EID: 65349096400     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/7/075604     Document Type: Article

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