Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxide semiconductor field effect transistors

Journal of Applied Physics

Volumn 104, Issue 4, 2008, Pages

  Huet, Karim ^a,b   Querlioz, Damien ^a   Chaisantikulwat, Wipa ^a   Saint Martin, J́rôme ^a   Bournel, Arnaud ^a   Mouis, Mireille ^a   Dollfus, Philippe ^a  

^a CNRS   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; CHARGE COUPLED DEVICES; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; GALVANOMAGNETIC EFFECTS; MAGNETIC FIELD EFFECTS; MAGNETIC FIELD MEASUREMENT; MAGNETIC FIELDS; MAGNETIC MATERIALS; MAGNETOELECTRONICS; MAGNETORESISTANCE; METAL RECOVERY; METALLIC COMPOUNDS; MONTE CARLO METHODS; MOS DEVICES; MOSFET DEVICES; NUMERICAL ANALYSIS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SMELTING; TRANSISTORS;

EXPERIMENTAL METHODS; MAGNETORESISTANCE MOBILITY; MOBILITY EXTRACTION;

FIELD EFFECT TRANSISTORS;

EID: 50849114840     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2969661     Document Type: Article

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