Channel electron mobility dependence on lateral electric field in field-effect transistors

Journal of Applied Physics

Volumn 87, Issue 2, 2000, Pages 876-881

  Hoyniak, Dennis ^a   Nowak, Edward ^a   Anderson, Richard L ^b  

^a IBM MICROELECTRONICS   (United States)

^b UNIVERSITY OF VERMONT   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041729228     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371955     Document Type: Article

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