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Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1311-1319

InAs-GaAs quantum pyramid lasers: In situ growth, radiative lifetimes and polarization properties

Author keywords

Injection lasers; Lifetime; Molecular beam epitaxy; Polarization; Quantum dots

Indexed keywords

CURRENT DENSITY; INJECTION LASERS; LIGHT EMISSION; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

EID: 0030080454     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1311     Document Type: Article
Times cited : (141)

References (32)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.