1 W at 785 nm from a frequency-doubled waferfused semiconductor disk laser

Optics Express

Volumn 20, Issue 8, 2012, Pages 9046-9051

  Rantamäki, Antti ^a   Rautiainen, Jussi ^a   Lyytikäinen, Jari ^a   Sirbu, Alexei ^b   Mereuta, Alexandru ^b   Kapon, Eli ^b   Okhotnikov, Oleg G ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICALLY PUMPED LASERS; PHOTONICS; PUMPING (LASER); SAPPHIRE; TUNGSTEN;

ATOMIC COOLING; BIO PHOTONICS; DIFFRACTION-LIMITED BEAMS; INTRA CAVITY FREQUENCY DOUBLING; OPTICALLY PUMPED SEMICONDUCTOR DISK LASERS; OUTPUT POWER; SEMICONDUCTOR DISK LASER; TI: SAPPHIRE LASER;

SEMICONDUCTOR LASERS;

ARTICLE; COMPARATIVE STUDY; DIODE LASER; EQUIPMENT DESIGN; EVALUATION; LIGHT; LIGHT RELATED PHENOMENA; SOLID STATE LASER;

EQUIPMENT DESIGN; LASERS, SEMICONDUCTOR; LASERS, SOLID-STATE; LIGHT; OPTICAL PHENOMENA;

EID: 84860163042     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.009046     Document Type: Article

References (42)

1. 00 beams," IEEE Photon. Technol. Lett. 9(8), 1063-1065 (1997). (Pubitemid 127576249)
2. 10 in an external resonator," Opt. Lett. 33(15), 1705-1707 (2008).
3. M. Rahim, F. Felder, M. Fill, and H. Zogg, "Optically pumped 5 μ m IV-VI VECSEL with Al-heat spreader," Opt. Lett. 33(24), 3010-3012 (2008).
4. J. Chilla, Q. Shu, H. Zhou, E. Weiss, M. Reed, and L. Spinelli, "Recent advances in optically pumped semiconductor lasers," Proc. SPIE 6451, 645109, 645109-10 (2007).
5. A. Chernikov, J. Herrmann, M. Koch, B. Kunert, W. Stolz, S. Chatterjee, S. Koch, T. Wang, Y. Kaneda, J. Yarborough, J. Hader, and J. V. Moloney, "Heat management in high-power vertical external-cavity surface-emitting lasers," IEEE J. Sel. Top. Quantum Electron. 17(6), 1772-1778 (2011).
6. T. Wang, Y. Kaneda, J. Yarborough, J. Hader, J. Moloney, A. Chernikov, S. Chatterjee, S. Koch, B. Kunert, and W. Stolz, "High-power optically pumped semiconductor laser at 1040 nm," IEEE Photon. Technol. Lett. 22(9), 661-663 (2010).
7. J. Chilla, S. Butterworth, A. Zeitschel, J. Charles, A. Caprara, M. Reed, and L. Spinelli, "High power optically pumped semiconductor lasers," Proc. SPIE 5332, 143-150 (2004).
8. S. Hilbich, W. Seelert, V. Ostroumov, C. Kannengiesser, R. Elm, J. Mueller, E. Weiss, H. Zhou, and J. Chilla, "New wavelengths in the yellow-orange range between 545 nm and 580 nm generated by an intracavity frequency-doubled optically pumped semiconductor laser," Proc. SPIE 6451, 64510C (2007).
9. M. Fallahi, Li Fan, Y. Kaneda, C. Hessenius, J. Hader, Hongbo Li, J. V. Moloney, B. Kunert, W. Stolz, S. W. Koch, J. Murray, and R. Bedford, "5-W yellow laser by intracavity frequency doubling of high power vertical-external-cavity surface-emitting laser," IEEE Photon. Technol. Lett. 20(20), 1700-1702 (2008).
10. T. Leinonen, V. Korpijärvi, A. Härkonen, and M. Guina, "7.4 W yellow GaInNAs based semiconductor disk laser," Electron. Lett. 47(20), 1139-1440 (2011).
11. J. Hastie, J. Hopkins, S. Calvez, C. Jeon, D. Burns, R. Abram, E. Riis, A. Ferguson, and M. Dawson, "0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser," IEEE Photon. Technol. Lett. 15(7), 894-896 (2003).
12. W. Zhang, T. Ackemann, S. McGinily, M. Schmid, E. Riis, and A. I. Ferguson, "Operation of an optical in-well-pumped vertical-external-cavity surface-emitting laser," Appl. Opt. 45(29), 7729-7735 (2006). (Pubitemid 44671402)
13. M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. Ferguson, and E. Riis, "Optical in-well pumping of a vertical-external-cavity surface-emitting laser," Appl. Phys. Lett. 84(24), 4860 (2004).
14. J. Hastie, L. Morton, A. Kemp, M. Dawson, A. Krysa, and J. Roberts, "Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface emitting laser," Appl. Phys. Lett. 89(6), 061114 (2006).
15. 00 emission at 716-755 nm," Opt. Express 17(24), 21782-21787 (2009).
16. J. Rautiainen, A. Härkönen, V. M. Korpijärvi, P. Tuomisto, M. Guina, and O. G. Okhotnikov, "2.7 W tunable orange-red GaInNAs semiconductor disk laser," Opt. Express 15(26), 18345-18350 (2007).
17. T. Jouhti, C. Peng, E. Pavelescu, J. Konttinen, L. Gomes, O. Okhotnikov, and M. Pessa, "Strain-compensated GaInNAs structures for 1.3-μ m lasers," IEEE J. Sel. Top. Quantum Electron. 8(4), 787-794 (2002). (Pubitemid 35327628)
18. V. Korpijärvi, M. Guina, J. Puustinen, P. Tuomisto, J. Rautiainen, A. Härkönen, A. Tukiainen, O. Okhotnikov, and M. Pessa, "MBE grown GaInNAs-based multi-Watt disk lasers," J. Cryst. Growth 311(7), 1868-1871 (2009).
19. V. M. Korpijärvi, T. Leinonen, J. Puustinen, A. Härkönen, and M. D. Guina. 11 W single gain-chip dilute nitride disk laser emitting around 1180 nm," Opt. Express 18(25), 25633-25641, 641(2010).
20. J. Hopkins, S. Smith, C. Jeon, H. Sun, D. Burns, S. Calvez, M. Dawson, T. Jouhti, and M. Pessa, "0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μ m," Electron. Lett. 40(1), 30-31 (2004).
21. M. Butkus, J. Rautiainen, O. G. Okhotnikov, C. J. Hamilton, G. P. A. Malcolm, S. S. Mikhrin, I. L. Krestnikov, D. A. Livshits, and E. U. Rafailov, "Quantum dot based semiconductor disk lasers for 1-1.3 μ m," IEEE J. Sel. Top. Quantum Electron. 17(6), 1763-1771 (2011).
22. J. Rautiainen, I. Krestnikov, J. Nikkinen, and O. G. Okhotnikov, "2.5 W orange power by frequency conversion from a dual-gain quantum-dot disk laser," Opt. Lett. 35(12), 1935-1937 (2010).
23. H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, "0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm," Electron. Lett. 40(10), 601-602 (2004).
24. M. Guden and J. Piprek, "Material parameters of quaternary III-V semiconductors for multilayer mirrors at wavelength," Model. Simul. Mater. Sci. Eng. 4(4), 349-357 (1996). (Pubitemid 126657876)
25. N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, "High-brightness long-wavelength semiconductor disk lasers," Laser Photon. Rev. 2(3), 160-181 (2008).
26. C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, "High performance 1.55 μ m vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror," Electron. Lett. 40(12), 734-735 (2004).
27. A. Syrbu, J. Fernandez, J. Behrend, C. Berseth, J. Carlin, A. Rudra, and E. Kapon, "InGaAs/lnGaAsP/lnP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion," Electron. Lett. 33(10), 866-868 (1997). (Pubitemid 127626007)
28. J. Rautiainen, L. Toikkanen, J. Lyytikainen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, "Wafer fused optically-pumped semiconductor disk laser operating at 1220-nm," in Proceedings of IEEE Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference (Munich, 2009, paper CB5-3.
29. J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, "13-μ m optically-pumped semiconductor disk laser by wafer fusion," Opt. Express 17(11), 9047-9052 (2009).
30. J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, "High-power 1.48-μ m wafer-fused optically pumped semiconductor disk laser," IEEE Photon. Technol. Lett. 23(13), 917-919 (2011).
31. J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, "2.6 W optically-pumped semiconductor disk laser operating at 1.57-μ m using wafer fusion," Opt. Express 16(26), 21881-21886 (2008).
32. A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, "3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser," Opt. Express 18(21), 21645-21650 (2010).
33. M. Schmid, "Optically in-well-pumped VECSELs: An attractive new aource in the near-IR," Photon. Spectra 38(11), 58-64 (2004).
34. B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Ö. Fricke, H. Wenzel, M. Zorn, G. Ö. Erbert, and G. Ü. TrÄnkle, "High-brightness quantum well tapered lasers," IEEE J. Sel. Top. Quantum Electron. 15(3), 1009-1020 (2009).
35. A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, "Wafer-fused optically-pumped VECSELs emitting in the 1310 nm and 1550 nm wavebands," Adv. Opt. Technol. 2011, 1-8 (2011).
36. Z. Liau, "Semiconductor wafer bonding via liquid capillarity," Appl. Phys. Lett. 77(5), 651 (2000).
37. J. H. Lee, S. M. Lee, T. Kim, and Y. J. Park, "7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser," Appl. Phys. Lett. 89(24), 241107 (2006).
38. J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, "Highly efficient green VECSEL with intra-cavity diamond heat spreader," Electron. Lett. 43(2), 105-107 (2007). (Pubitemid 46184750)
39. J. Bartschke, R. Knappe, K.-J. Boller, and R. Wallenstein, "Investigation of efficient self-frequency-doubling Nd:YAB Lasers," IEEE J. Quantum Electron. 33(12), 2295-2300 (1997). (Pubitemid 127680933)
40. C. Wang, L. Reekie, Y. Chow, and W. Gambling, "Efficient blue light generation from a diode laser pumped Nd: YAG laser," Opt. Commun. 167(1-6), 155-158 (1999).
41. 6 (BIBO) crystal," Appl. Phys. B 73(3), 215-217 (2001). (Pubitemid 33017855)
42. A. Maclean, A. Kemp, S. Calvez, J. Kim, T. Kim, M. Dawson, and D. Burns, "Continuous tuning and efficient intracavity second-harmonic generation in a semiconductor disk laser with an intracavity diamond heatspreader," IEEE J. Quantum Electron. 44(3), 216-225 (2008). (Pubitemid 351351382)