3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser

Optics Express

Volumn 18, Issue 21, 2010, Pages 21645-21650

  Rantamäki, Antti ^a   Sirbu, Alexei ^b   Mereuta, Alexandru ^b   Kapon, Eli ^b   Okhotnikov, Oleg G ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DISKS (STRUCTURAL COMPONENTS); FREQUENCY DOUBLERS;

ACTIVE MEDIUM; FREQUENCY-DOUBLING; FUNDAMENTAL WAVELENGTH; GAAS/ALGAAS; INP; OUTPUT POWER; RED EMISSIONS; SEMICONDUCTOR DISK LASER;

SEMICONDUCTOR LASERS;

EID: 78049517009     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.021645     Document Type: Article

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