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Volumn 15, Issue 26, 2007, Pages 18345-18350

2.7 W tunable orange-red GaInNAs semiconductor disk laser

Author keywords

[No Author keywords available]

Indexed keywords

FABRY-PEROT INTERFEROMETERS; FREQUENCY DOUBLERS; IMAGE CONVERTERS; LASER TUNING; SEMICONDUCTING GALLIUM COMPOUNDS; WAVELENGTH;

EID: 37549048683     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.15.018345     Document Type: Article
Times cited : (44)

References (14)
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    • Lutgen, S.1    Albrecht, T.2    Brick, P.3    Reill, W.4    Luft, J.5    Spath, W.6
  • 4
    • 33845808790 scopus 로고    scopus 로고
    • 7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser
    • J. H. Lee, S.M. Lee, T. Kim, and Y. J. Park, "7 W high-efficiency continuous-wave green light generation by intracavity frequency doubling of an end-pumped vertical external-cavity surface emitting semiconductor laser," Appl. Phys. Lett. 89, 241107 (2006).
    • (2006) Appl. Phys. Lett , vol.89 , pp. 241107
    • Lee, J.H.1    Lee, S.M.2    Kim, T.3    Park, Y.J.4
  • 5
    • 34248362034 scopus 로고    scopus 로고
    • New wavelengths in the yellow orange range between 545 nm and 580 nm generated by intracavity frequency-doubled optically pumped semiconductor lasers
    • S. Hilbich, W. R. Seelert, V. G. Ostroumov, C. Kannengiesser, R. von Elm, J. Mueller, E. S. Weiss, H. Zhou, and J. L. A. Chilla, "New wavelengths in the yellow orange range between 545 nm and 580 nm generated by intracavity frequency-doubled optically pumped semiconductor lasers," Proc. SPIE 6451, 64510C (2007).
    • (2007) Proc. SPIE , vol.6451
    • Hilbich, S.1    Seelert, W.R.2    Ostroumov, V.G.3    Kannengiesser, C.4    von Elm, R.5    Mueller, J.6    Weiss, E.S.7    Zhou, H.8    Chilla, J.L.A.9
  • 7
    • 0346935298 scopus 로고    scopus 로고
    • Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser
    • E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, "Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser," J. of Appl. Phys. 94, 7397-7401 (2003).
    • (2003) J. of Appl. Phys , vol.94 , pp. 7397-7401
    • Gerster, E.1    Ecker, I.2    Lorch, S.3    Hahn, C.4    Menzel, S.5    Unger, P.6
  • 8
    • 21844444098 scopus 로고    scopus 로고
    • InGaAsN/GaAs lasers: High performance and long lifetime
    • C. S. Peng, T. Jouhti, J. Konttinen, and M. Pessa, "InGaAsN/GaAs lasers: high performance and long lifetime," Proc. SPIE 5738, 204 (2005).
    • (2005) Proc. SPIE , vol.5738 , pp. 204
    • Peng, C.S.1    Jouhti, T.2    Konttinen, J.3    Pessa, M.4
  • 12
    • 0005314389 scopus 로고    scopus 로고
    • High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser
    • W. J. Alford, T. D. Raymond, and A. A. Allerman, "High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser," J. Opt. Soc. Am. B 19, 663-666 (2002).
    • (2002) J. Opt. Soc. Am. B , vol.19 , pp. 663-666
    • Alford, W.J.1    Raymond, T.D.2    Allerman, A.A.3
  • 13
    • 13444279058 scopus 로고    scopus 로고
    • Thermal Managenemt in Vertical-External-Cavity Surface-Emitting Lasers: Finite-Element Analysis of a Heatspreader Approach
    • A. J. Kemp, G. J. Valentine, J.-M. Hopkins, J. E. Hastie, S. A. Smith, S. Calvez, M. D. Dawson, and D. Burns, "Thermal Managenemt in Vertical-External-Cavity Surface-Emitting Lasers: Finite-Element Analysis of a Heatspreader Approach," J. of Quant. Electr. 41, 148-155 (2005).
    • (2005) J. of Quant. Electr , vol.41 , pp. 148-155
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    • Semiconductor wafer bonding via liquid capillarity
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    • Liau, Z.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.