Wafer fused optically-pumped semiconductor disk laser operating at 1220-nm

CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference

Volumn , Issue , 2009, Pages

  Rautiainen, Jussi ^a   Toikkanen, Lauri ^a   Lyytikäinen, Jari ^a   Sirbu, Alexei ^b   Mereuta, Alexandru ^b   Caliman, Andrei ^b   Kapon, Eli ^b   Okhotnikov, G Oleg ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 70449555444     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CLEOE-EQEC.2009.5192150     Document Type: Conference Paper

References (2)

1. J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, "2.6 W optically-pumped semiconductor disk laser operating at 1.57-μm using wafer fusion", Opt. Express 16, 21881-21886 (2008).
2. A. V. Syrbu, J. Fernandez, J. Behrend, C. A. Berseth, J. F. Carlin, A. Rudra, E. Kapon, "InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localised wafer fusion", Electron. Lett. 33, 866-868 (1997).