High-power 1.48-μm wafer-fused optically pumped semiconductor disk laser

IEEE Photonics Technology Letters

Volumn 23, Issue 13, 2011, Pages 917-919

  Lyytikainen J ^a   Rautiainen, J ^a   Sirbu, A ^b   Iakovlev, V ^b   Laakso, A ^a   Ranta, S ^a   Tavast, M ^a   Kapon, E ^b   Okhotnikov, O G ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b EPFL   (Switzerland)

Author keywords

Optical pumping; quantum wells; semiconductor lasers; surface emitting lasers

Indexed keywords

ACTIVE ELEMENTS; ACTIVE REGIONS; ALGAAS/GAAS; ALGAINAS/INP; DISK LASERS; FLEXIBLE PLATFORMS; GAAS SUBSTRATES; GAIN STRUCTURES; HEAT REMOVAL; HEAT SPREADERS; HIGH-POWER; INP SUBSTRATES; INTRACAVITIES; OPTICALLY PUMPED SEMICONDUCTOR DISK LASERS; OUTPUT POWER; QUANTUM WELL; WAFER-FUSION TECHNIQUE; WAVELENGTH RANGES;

GALLIUM ALLOYS; LASERS; OPTICAL PUMPING; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WELLS; SURFACE STRUCTURE; WAFER BONDING;

SILICON WAFERS;

EID: 79959299706     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2143399     Document Type: Article

References (8)

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