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Electronics Letters

Volumn 47, Issue 20, 2011, Pages 1139-1140

7.4W yellow GaInNAs-based semiconductor disk laser

(4) Leinonen, T a Korpijarvi V M a Harkonen A a Guina, M a

a TAMPERE UNIVERSITY OF TECHNOLOGY (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

BETA-BARIUM-BORATE CRYSTALS; GAINNAS; HIGH QUALITY; HIGH-POWER; INTRACAVITIES; OUTPUT POWER; SEMICONDUCTOR DISK LASER; SINGLE-CHIP; WAVELENGTH RANGES;

BARIUM; GALLIUM NITRIDE; INFRARED RADIATION;

QUANTUM WELL LASERS;

EID: 84855378787 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el.2011.2282 Document Type: Article

Times cited : (20)

References (6)

1
- 10744233276
- Laser diode reliability: Crystal defects and degradation modes
- DOI 10.1016/S1631-0705(03)00097-5
- Jiménez, J.: ' Laser diode reliability: crystal defects and degradation modes ', C. R. Phys., 2003, 4, (6), p. 663-673 10.1016/S1631- 0705(03)00097-5 (Pubitemid 37239286)
- (2003) Comptes Rendus Physique , vol.4 , Issue.6 , pp. 663-673
- Jimenez, J.¹

2
- 0346935298
- Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser
- 10.1063/1.1625784 0021-8979
- Gerster, E., Ecker, I., Lorch, S., Hahn, C., Menzel, S., and Unger, P.: ' Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser ', J. Appl. Phys., 2003, 94, (12), p. 7397-7401 10.1063/1.1625784 0021-8979
- (2003) J. Appl. Phys. , vol.94 , Issue.12 , pp. 7397-7401
- Gerster, E.¹ Ecker, I.² Lorch, S.³ Hahn, C.⁴ Menzel, S.⁵ Unger, P.⁶

3
- 34848898090
- Highly strained InGaAsGaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170 nm
- DOI 10.1063/1.2790838
- Fan, L., Hessenius, C., Fallahi, M., Hader, J., Li, H., Moloney, J.V., Stolz, W., Koch, S.W., Murray, J.T., and Bedford, R.: ' Highly strained InGaAs/GaAs multiwatt vertical-external-cavity surface-emitting laser emitting around 1170nm ', Appl. Phys. Lett., 2007, 91, (13), p. 131114 10.1063/1.2790838 0003-6951 (Pubitemid 47502541)
- (2007) Applied Physics Letters , vol.91 , Issue.13 , pp. 131114
- Fan, L.¹ Hessenius, C.² Fallahi, M.³ Hader, J.⁴ Li, H.⁵ Moloney, J.V.⁶ Stolz, W.⁷ Koch, S.W.⁸ Murray, J.T.⁹ Bedford, R.¹⁰

4
- 77954948143
- 2.5 W orange power by frequency conversion from a dual-gain quantum-dot disk laser
- 10.1364/OL.35.001935 0146-9592
- Rautiainen, J., Krestnikov, I., Nikkinen, J., and Okhotnikov, O.G.: ' 2.5 W orange power by frequency conversion from a dual-gain quantum-dot disk laser ', Opt. Lett., 2010, 35, (12), p. 1935-1937 10.1364/OL.35.001935 0146-9592
- (2010) Opt. Lett. , vol.35 , Issue.12 , pp. 1935-1937
- Rautiainen, J.¹ Krestnikov, I.² Nikkinen, J.³ Okhotnikov, O.G.⁴

5
- 73549107679
- High-power disk lasers based on dilute nitride heterostructures
- 10.1088/1367-2630/11/12/125019 1367-2630
- Guina, M., Leinonen, T., Härkönen, A., and Pessa, M.: ' High-power disk lasers based on dilute nitride heterostructures ', New J. Phys., 2009, 11, (12), p. 125019 10.1088/1367-2630/11/12/125019 1367-2630
- (2009) New J. Phys. , vol.11 , Issue.12 , pp. 125019
- Guina, M.¹ Leinonen, T.² Härkönen, A.³ Pessa, M.⁴

6
- 78650069057
- 11 W single gain-chip dilute nitride disk laser emitting around 1180nm
- 10.1364/OE.18.025633 1094-4087
- Korpijärvi, V., Leinonen, T., Puustinen, J., Härkönen, A., and Guina, M.: ' 11 W single gain-chip dilute nitride disk laser emitting around 1180nm ', Opt. Express, 2010, 18, (25), p. 25633-25641 10.1364/OE.18.025633 1094-4087
- (2010) Opt. Express , vol.18 , Issue.25 , pp. 25633-25641
- Korpijärvi, V.¹ Leinonen, T.² Puustinen, J.³ Härkönen, A.⁴ Guina, M.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.