MBE grown GaInNAs-based multi-Watt disk lasers

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1868-1871

  Korpijarvi V M ^a   Guina, M ^a   Puustinen, J ^a   Tuomisto, P ^b   Rautiainen, J ^a   Harkonen A ^a   Tukiainen, A ^a   Okhotnikov, O ^a   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b EpiCrystals Inc   (Finland)

Author keywords

A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconductor III V materials; B3. Semiconductor lasers

Indexed keywords

CRYSTAL GROWTH; DISKS (STRUCTURAL COMPONENTS); ELECTRIC CONDUCTIVITY; GALLIUM NITRIDE; HETEROJUNCTIONS; LASERS; MIRRORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITROGEN; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; WELLS;

A3. MOLECULAR BEAM EPITAXY; A3. QUANTUM WELLS; ACTIVE MEDIAS; B2. SEMICONDUCTOR III-V MATERIALS; B3. SEMICONDUCTOR LASERS; DETRIMENTAL EFFECTS; DIFFERENTIAL EFFICIENCIES; DISK LASERS; EMISSION EFFICIENCIES; GAINNAS; GROWTH PARAMETERS; HIGH QUALITIES; OUTPUT POWER; RADIO FREQUENCY PLASMAS; SEMICONDUCTOR DISK LASERS; SPECTRAL RANGES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 63349106649     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.083     Document Type: Article

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