Low-temperature pulsed CVD of thin layers of metallic ruthenium for microelectronics and nanoelectronics. Part 3: Nucleation phenomena during the growth of ruthenium layers

Russian Microelectronics

Volumn 39, Issue 4, 2010, Pages 262-272

  Vasilyev, V Yu ^a  

^a NOVOSIBIRSK STATE TECHNICAL UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

[CARBONYL; INITIAL STAGES; LOW TEMPERATURES; PULSED CVD; PULSED DEPOSITION; TEMPERATURE RANGE; THIN LAYERS; VAPOR PHASE;

MICROELECTRONICS; NUCLEATION; OLEFINS; RUTHENIUM COMPOUNDS;

RUTHENIUM;

EID: 77956245146     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063739710040049     Document Type: Article

References (19)

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