Improved nucleation behavior of Ru thin films prepared by MOCVD on TiCl4 pretreated substrates

Electrochemical and Solid-State Letters

Volumn 10, Issue 10, 2007, Pages

  Kim, Beom Seok ^a   Kang, Sang Yeol ^b   Seo, Han Seok ^a   Hwang, Cheol Seong ^a,c   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; SILICA; SURFACE MORPHOLOGY; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

NUCLEATION DENSITY; PRETREATED SUBSTRATES;

THIN FILMS;

EID: 34547849599     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2767991     Document Type: Article

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