Pretreatment technique for surface improvement of Ru films in Ru-metalorganic chemical vapor deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1120-1123

  Han, Hee ^a   Kim, Jae Jeong ^a   Yoon, Do Young ^b  

^a Seoul National University   (South Korea)

^b Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE SITES; GROWTH RATE; NUCLEUS CREATION; SURFACE PRETREATMENT;

ACTIVATION ANALYSIS; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; INTEGRATED CIRCUITS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; PALLADIUM; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SUBSTRATES; SURFACE ROUGHNESS; THIN FILMS; TITANIUM NITRIDE; X RAY DIFFRACTION ANALYSIS;

RUTHENIUM;

EID: 4344585542     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1756876     Document Type: Article

References (22)

1. J. H. Huang, Y.-S. Lai, and S. J. S. Chen, J. Electrochem. Soc. 148, F133 (2001).
2. J. W. Lee, K.-M. Kim, H.-S. Song, K.-C. Jeong, J. M. Lee, and J. S. Rho, Jpn. J. Appl. Phys., Part 1 40, 5201 (2001).
3. S. Ezhilvalavn and T.-Y. Tseng, Mater. Chem. Phys. 65, 227 (2000).
4. T. Aoyama, M. Kiyotoshi, S. Yamazaki, and K. Eguchi, Jpn. J. Appl. Phys., Part 1 38, 2194 (1999).
5. E.-S. Choi, J.-C. Lee, J.-S. Hwang, and S.-G. Yoon, Jpn. J. Appl. Phys., Part 1 38, 5317 (1999).
6. Y.-S. Kim, R. H. Rampersad, and G. R. Tynan, Jpn. J. Appl. Phys., Part 2 37, L502 (1998).
7. T. Aoyama and K. Eguchi, Jpn. J. Appl. Phys., Part 2 38, L1134 (1999).
8. O. Chyan, T. Arunagiri, and T. Ponnuswamy, J. Electrochem. Soc. 150, C347 (2003).
9. D. Josell, D. Wheeler, C. Witt, and T. P. Moffat, Electrochem. Solid-State Lett. 6, C143 (2003).
10. S. Y. Kang, K. H. Choi, S. K. Lee, C. S. Hwang, and H. J. Kim, J. Electrochem. Soc. 147, 1161 (2000).
11. M. L. Green, M. E. Gross, L. E. Papa, K. J. Schnoes, and D. Brasen, J. Electrochem. Soc. 132, 2677 (1985).
12. S.-E. Park, H.-M. Kim, K.-B. Kim, and S.-H. Min, J. Electrochem. Soc. 147, 203 (2000).
13. Y. Matsui, M. Hiratani, T. Nabatame, Y. Shimamoto, and S. Kimura, Electrochem. Solid-State Lett. 5, C18 (2002).
14. Y. Matsui, M. Hiratani, T. Nabatame, Y. Shimamoto, and S. Kimura, Electrochem. Solid-State Lett. 4, C9 (2001).
15. J. J. Kim, D. H. Jung, M. S. Kim, S. H. Kim, and D. Y. Yoon, Thin Solid Films 409, 28 (2002).
16. J. J. Kim, M. S. Kim, and D. Y. Yoon, Chem. Vap. Deposition 2, 105 (2003).
17. E. P. Boyd, D. R. Ketchum, H. Deng, and S. G. Shore, Chem. Mater. 9, 1154 (1997).
18. D.-J. Lee, S.-W. Kang, and S.-W. Rhee, Thin Solid Films 413, 237 (2002).
19. K.-W. Kim, N.-S. Kim, Y.-S. Kim, I.-S. Choi, H.-J. Kim, J.-C. Park, and S. Y. Lee, Jpn. J. Appl. Phys., Part 1 41, 820 (2002).
20. Y. C. Choi and B. S. Lee, Jpn. J. Appl. Phys., Part 1 38, 4876 (1999).
21. J. J. Kim and S. H. Cha, Jpn. J. Appl. Phys., Part 1 40, 7151 (2001).
22. J. C. Patterson, C. Ni Dheasuna, J. Barrett, T. R. Spalding, M. O'Reilly, X. Jiang, and G. M. Crean, Appl. Surf. Sci. 91, 124 (1995).