Highly thermally stable and reproducible of ALD RuO2 nanocrystal floating gate memory devices with large memory window and good retention

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2008, Pages 50-51

  Maikap, S ^a   Banerjee, W ^a   Tzeng, P J ^b   Wang, T Y ^c   Lin, C H ^b   Tien, T C ^b   Lee, L S ^b   Yang, J R ^c   Kao, M J ^b   Tsai, M J ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c UNIVERSITY OF SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

RUTHENIUM COMPOUNDS; SECURITY SYSTEMS; TECHNOLOGY; THERMODYNAMIC STABILITY;

INTERNATIONAL SYMPOSIUM; VLSI TECHNOLOGIES;

RUTHENIUM ALLOYS;

EID: 49049088914     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2008.4530793     Document Type: Conference Paper

References (4)

1. J. R. Hwang et al., IEDM Tech. Dig., 2005, p. 161.
2. S. Tiwari et al, IEDM Ted-Dig., 1995, p. 521.
3. Y. J. Ahn et al., Symp. on VLSI Tech. Dig, 2006, p. 109.
4. S. Maikap et al., Appl. Phys. Lett., vol. 91, 043114, 2007.